LEADER 02206nam0 22004693i 450 001 VAN0212110 005 20230612105950.648 017 70$2N$a9789811334443 100 $a20210915d2018 |0itac50 ba 101 $aeng 102 $aSG 105 $a|||| ||||| 200 1 $aElectrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors$eDoctoral Thesis accepted by the Peking University, Beijing, China$fMengqi Fu 210 $aSingapore$cSpringer$d2018 215 $axv, 102 p.$cill.$d24 cm 410 1$1001VAN0104193$12001 $aSpringer theses$erecognizing outstanding Ph.D. research$1210 $aBerlin$cSpringer$d2010- 500 1$3VAN0212116$aElectrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors$91867827 606 $a82-XX$xStatistical mechanics, structure of matter [MSC 2020]$3VANC021931$2MF 606 $a78-XX$xOptics, electromagnetic theory [MSC 2020]$3VANC022356$2MF 606 $a00A79 (77-XX)$xPhysics [MSC 2020]$3VANC023182$2MF 610 $aCrystal orientation$9KW:K 610 $aCrystal phase$9KW:K 610 $aElectrical properties$9KW:K 610 $aElectron microscope$9KW:K 610 $aField-effect transistors$9KW:K 610 $aGrowth methods$9KW:K 610 $aIn-situ material characterization$9KW:K 610 $aInAs nanowires$9KW:K 610 $aIndium Arsenide$9KW:K 610 $aMBE and MOCVD$9KW:K 610 $aUltrathin nanowires$9KW:K 620 $aSG$dSingapore$3VANL000061 700 1$aFu$bMengqi$3VANV182503$0835653 712 $aSpringer $3VANV108073$4650 801 $aIT$bSOL$c20240614$gRICA 856 4 $uhttp://doi.org/10.1007/978-981-13-3444-3$zE-book ? Accesso al full-text attraverso riconoscimento IP di Ateneo, proxy e/o Shibboleth 899 $aBIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICA$1IT-CE0120$2VAN08 912 $fN 912 $aVAN0212110 950 $aBIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICA$d08CONS e-book 3778 $e08eMF3778 20210915 996 $aElectrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors$91867827 997 $aUNICAMPANIA