LEADER 02185nam0 22004573i 450 001 VAN0187568 005 20230613084600.440 017 70$2N$a9783319666075 100 $a20210719d2017 |0itac50 ba 101 $aeng 102 $aCH 105 $a|||| ||||| 200 1 $aGrowth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets$eDoctoral Thesis accepted by The Complutense University of Madrid, Spain$fMaría Ángela Pampillón Arce 210 $aCham$cSpringer$d2017 215 $axxiii, 164 p.$cill.$d24 cm 410 1$1001VAN0104193$12001 $aSpringer theses$erecognizing outstanding Ph.D. research$1210 $aBerlin$cSpringer$d2010- 500 1$3VAN0187570$aGrowth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets$91830207 606 $a00A79 (77-XX)$xPhysics [MSC 2020]$3VANC023182$2MF 606 $a74K35$xThin films [MSC 2020]$3VANC033952$2MF 606 $a74A50$xStructured surfaces and interfaces, coexistent phases [MSC 2020]$3VANC036162$2MF 610 $aGadolinium Oxide$9KW:K 610 $aGadolinium Scandate$9KW:K 610 $aHigh Permittivity Dielectrics$9KW:K 610 $aHigh Pressure Sputtering$9KW:K 610 $aInP Substrates$9KW:K 610 $aMIS Devices$9KW:K 610 $aMOSFET$9KW:K 610 $aPlasma Oxidation$9KW:K 610 $aScandium Oxide$9KW:K 610 $aScavenging Effect$9KW:K 620 $aCH$dCham$3VANL001889 700 1$aPampillón Arce$bMaría Á.$3VANV167264$0821841 712 $aSpringer $3VANV108073$4650 801 $aIT$bSOL$c20240614$gRICA 856 4 $uhttp://doi.org/10.1007/978-3-319-66607-5$zE-book ? Accesso al full-text attraverso riconoscimento IP di Ateneo, proxy e/o Shibboleth 899 $aBIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICA$1IT-CE0120$2VAN08 912 $fN 912 $aVAN0187568 950 $aBIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICA$d08CONS e-book 3139 $e08eMF3139 20210719 996 $aGrowth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets$91830207 997 $aUNICAMPANIA