LEADER 01793nam0 22004213i 450 001 VAN0177812 005 20230616091540.267 017 70$2N$a9789401775977 100 $a20210708d2016 |0itac50 ba 101 $aeng 102 $aNL 105 $a|||| ||||| 200 1 $aVariation-Aware Advanced CMOS Devices and SRAM$fChanghwan Shin 210 $aDordrecht$cSpringer$d2016 215 $avii, 140 p.$cill.$d24 cm 410 1$1001VAN0063131$12001 $aSpringer series in advanced microelectronics$1210 $aBerlin [etc.]$cSpringer$v56 500 1$3VAN0177813$aVariation-Aware Advanced CMOS Devices and SRAM$91820621 606 $a00A79 (77-XX)$xPhysics [MSC 2020]$3VANC023182$2MF 610 $aCMOS Device Designs$9KW:K 610 $aIntegrated circuits$9KW:K 610 $aLine Edge Roughness$9KW:K 610 $aMOSFET$9KW:K 610 $aProcess-Induced Random Variation$9KW:K 610 $aRandom Dopant Fluctuation$9KW:K 610 $aStatic Random Access Memory$9KW:K 610 $aVariation-Robust CMOS$9KW:K 610 $aWork-function Variation$9KW:K 620 $aNL$dDordrecht$3VANL000068 700 1$aShin$bChanghwan$3VANV160082$0815568 712 $aSpringer $3VANV108073$4650 801 $aIT$bSOL$c20240614$gRICA 856 4 $uhttp://doi.org/10.1007/978-94-017-7597-7$zE-book ? Accesso al full-text attraverso riconoscimento IP di Ateneo, proxy e/o Shibboleth 899 $aBIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICA$1IT-CE0120$2VAN08 912 $fN 912 $aVAN0177812 950 $aBIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICA$d08CONS e-book 2955 $e08eMF2955 20210708 996 $aVariation-Aware Advanced CMOS Devices and SRAM$91820621 997 $aUNICAMPANIA