LEADER 01942nam0 22004333i 450 001 VAN0157189 005 20230614085603.439 017 70$2N$a9783662496831 100 $a20210608d2016 |0itac50 ba 101 $aeng 102 $aDE 105 $a|||| ||||| 200 1 $aˆThe ‰Source/Drain Engineering of Nanoscale Germanium-based MOS Devices$eDoctoral Thesis accepted by Peking University, Beijing, China$fZhiqiang Li 210 $aBerlin$aHeidelberg$cSpringer$d2016 215 $axiv, 59 p.$cill.$d24 cm 410 1$1001VAN0104193$12001 $aSpringer theses$erecognizing outstanding Ph.D. research$1210 $aBerlin$cSpringer$d2010- 500 1$3VAN0157190$aˆThe ‰Source/Drain Engineering of Nanoscale Germanium-based MOS Devices$91800519 606 $a74Axx$xGeneralities, axiomatics, foundations of continuum mechanics of solids [MSC 2020]$3VANC021919$2MF 606 $a00A79 (77-XX)$xPhysics [MSC 2020]$3VANC023182$2MF 610 $aContact resistance$9KW:K 610 $aDopant activation$9KW:K 610 $aDopant segregation$9KW:K 610 $aGermanium-based MOSFET$9KW:K 610 $aMOS device$9KW:K 610 $aNickel germanide$9KW:K 610 $aSource and drain$9KW:K 610 $aThermal stability$9KW:K 620 $dBerlin$3VANL000066 620 $aDE$dHeidelberg$3VANL000282 700 1$aLi$bZhiqiang$3VANV095355$0767421 712 $aSpringer $3VANV108073$4650 801 $aIT$bSOL$c20240614$gRICA 856 4 $uhttp://doi.org/10.1007/978-3-662-49683-1$zEbook - Accesso al full text attraverso riconoscimento indirizzo IP di Ateneo 899 $aBIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICA$1IT-CE0120$2VAN08 912 $fN 912 $aVAN0157189 950 $aBIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICA$d08CONS e-book 2617 $e08eMF2617 20210608 996 $aSource$91800519 997 $aUNICAMPANIA