LEADER 02152nam0 2200469 i 450 001 VAN0132818 005 20230621104531.5 017 70$2N$a9783319019703 100 $a20210326d2014 |0itac50 ba 101 $aeng 102 $aCH 105 $a|||| ||||| 200 1 $aSelf-Organized Quantum Dots for Memories$eElectronic Properties and Carrier Dynamics$e Doctoral Thesis accepted by the Technical University of Berlin, Germany$fTobias Nowozin 205 $aCham : Springer, 2014 210 $axvi$d153 p.$cill. ; 24 cm 215 410 1$1001VAN0104193$12001 $aSpringer theses$erecognizing outstanding Ph.D. research$1210 $aBerlin$cSpringer$d2010- 500 1$3VAN0134789$aSelf-Organized Quantum Dots for Memories$91768762 606 $a68-XX$xComputer science [MSC 2020]$3VANC019670$2MF 606 $a82-XX$xStatistical mechanics, structure of matter [MSC 2020]$3VANC021931$2MF 606 $a00A79 (77-XX)$xPhysics [MSC 2020]$3VANC023182$2MF 610 $aCoupling of Quantum Dots to a Two-dimensional System$9KW:K 610 $aDeep-Level Transient Spectroscopy (DLTS)$9KW:K 610 $aEmbedded Quantum Dots$9KW:K 610 $aGaSb/GaAs$9KW:K 610 $aHole Storage$9KW:K 610 $aInAs/GaAs$9KW:K 610 $aMany-particle Ground States$9KW:K 610 $aModulation-Doped Field-Effect Transistor$9KW:K 610 $aQuantum Dot Memory$9KW:K 610 $aSelf-assembled Quantum Dots$9KW:K 620 $aCH$dCham$3VANL001889 700 1$aNowozin$bTobias$3VANV106641$0791377 712 $aSpringer $3VANV108073$4650 801 $aIT$bSOL$c20240614$gRICA 856 4 $uhttp://doi.org/10.1007/978-3-319-01970-3$zE-book ? Accesso al full-text attraverso riconoscimento IP di Ateneo, proxy e/o Shibboleth 899 $aBIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICA$1IT-CE0120$2VAN08 912 $fN 912 $aVAN0132818 950 $aBIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICA$d08CONS e-book 2006 $e08eMF2006 20210326 996 $aSelf-Organized Quantum Dots for Memories$91768762 997 $aUNICAMPANIA