LEADER 01136nam0 22002893i 450 
001 VAN0121196
005 20230524102109.538
017 70$2N$a9783319316536
100   $a20190506d2016       |0itac50      ba
101   $aeng
102   $aCH
105   $a||||    |||||
200 1 $aTunneling Field Effect Transistor Technology$fLining Zhang, Mansun Chan editors
210   $aCham$cSpringer$d2016
215   $aix, 213 p.$d24 cm
620   $aCH$dCham$3VANL001889
702  1$aChan$bMansun$3VANV093128
702  1$aZhang$bLining$3VANV093127
712   $aSpringer <editore>$3VANV108073$4650
801   $aIT$bSOL$c20240614$gRICA
856 4 $uhttp://link.springer.com/openurl?genre=book&isbn=978-3-319-31653-6$zE-book ? Accesso al full-text attraverso riconoscimento IP di Ateneo, proxy e/o Shibboleth
899   $aBIBLIOTECA CENTRO DI SERVIZIO SBA$2VAN15
912   $fN
912   $aVAN0121196
950   $aBIBLIOTECA CENTRO DI SERVIZIO SBA$d15CONS      SBA EBOOK 3616                      $e15EB 3616              20190506            
996   $aTunneling Field Effect Transistor Technology$91551198
997   $aUNICAMPANIA