LEADER 00986nam0 22002653i 450 
001 VAN0063100
005 20230303113224.167
010   $a01-951701-4-8
100   $a20080227d1999       |0itac50      ba
101   $aeng
102   $aUS
105   $a||||    |||||
200 1 $aOperation and modeling of the MOS transistor$fYannis Tsividis
205   $a2. ed
210   $aNew York$aOxford$cOxford University$d1999
215   $aXX, 620 p.$cill.$d24 cm
620   $aUS$dNew York$3VANL000011
700  1$aTsividis$bYannis$3VANV050138$027597
712   $aOxford university  <editore>$3VANV107944$4650
801   $aIT$bSOL$c20240315$gRICA
899   $aBIBLIOTECA DEL DIPARTIMENTO DI INGEGNERIA$1IT-CE0100$2VAN05
912   $aVAN0063100
950   $aBIBLIOTECA DEL DIPARTIMENTO DI INGEGNERIA$d05PREST     K 306                               $e05   4951              20080227            $sBuono
996   $aOperation and modeling of the MOS transistor$91092950
997   $aUNICAMPANIA