LEADER 01318nam0 22002893i 450 001 VAN0063070 005 20231214125203.569 010 $a04-7085-541-X 100 $a20080226d2006 |0itac50 ba 101 $aeng 102 $aUS 105 $a|||| ||||| 200 1 $aCharge-based MOS transistor modeling$ethe EKV model for low-power and RF IC design$fChristian C. Enz, Eric A. Vittoz 210 $aHoboken$cWiley$d2006 215 $aXXIII, 303 p.$d25 cm 620 $aUS$dNew York$3VANL000011 700 1$aEnz$bChristian C.$3VANV050105$0725312 701 1$aVittoz$bEric A.$3VANV050106$0725311 712 $aWiley $3VANV108092$4650 801 $aIT$bSOL$c20240315$gRICA 856 4 $uhttps://onlinelibrary.wiley.com/doi/epdf/10.1002/0470855460.fmatter$zhttps://onlinelibrary.wiley.com/doi/epdf/10.1002/0470855460.fmatter 856 4 $uhttps://onlinelibrary.wiley.com/doi/book/10.1002/0470855460$zhttps://onlinelibrary.wiley.com/doi/book/10.1002/0470855460 899 $aBIBLIOTECA DEL DIPARTIMENTO DI INGEGNERIA$1IT-CE0100$2VAN05 912 $aVAN0063070 950 $aBIBLIOTECA DEL DIPARTIMENTO DI INGEGNERIA$d05PREST K 313 $e05 4919 20080226 $sBuono 996 $aCharge-based MOS transistor modeling$91415913 997 $aUNICAMPANIA