LEADER 01676nam0 22003973i 450 001 VAN00282695 005 20241218112639.537 017 70$2N$a9783030755867 100 $a20241108d2021 |0itac50 ba 101 $aeng 102 $aCH 105 $a|||| ||||| 181 $ai$b e 182 $ab 200 1 $aPhysics and Chemistry of Te and HgTe-based Ternary Semiconductor Melts$fChing-Hua Su 210 $aCham$cSpringer$d2021 215 $axvii, 134 p.$cill.$d24 cm 606 $a81V35$xNuclear physics [MSC 2020]$3VANC023270$2MF 606 $a82-XX$xStatistical mechanics, structure of matter [MSC 2020]$3VANC021931$2MF 606 $a92Exx$xChemistry [MSC 2020]$3VANC025596$2MF 610 $aHg-based II-VI compound semiconductors$9KW:K 610 $aMetal-Semiconductor transition$9KW:K 610 $aTe liquid$9KW:K 610 $aThermal conductivity measurements$9KW:K 610 $aThermodynamic formulation$9KW:K 620 $aCH$dCham$3VANL001889 700 1$aSu$bChing-Hua$3VANV193922$0845492 712 $aSpringer $3VANV108073$4650 801 $aIT$bSOL$c20241220$gRICA 856 4 $uhttp://doi.org/10.1007/978-3-030-75586-7$zE-book ? Accesso al full-text attraverso riconoscimento IP di Ateneo, proxy e/o Shibboleth 899 $aBIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICA$1IT-CE0120$2VAN08 912 $fN 912 $aVAN00282695 950 $aBIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICA$d08DLOAD e-Book 9651 $e08eMF9651 20241127 996 $aPhysics and Chemistry of Te and HgTe-based Ternary Semiconductor Melts$94286300 997 $aUNICAMPANIA