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001 VAN00248456
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017 70$2N$a978-3-030-68940-7
100   $a20220721d2021       |0itac50      ba
101   $aeng
102   $aCH
105   $a||||    |||||
200 1 $aHighly Integrated Gate Drivers for Si and GaN Power Transistors$fAchim Seidel, Bernhard Wicht
210   $aCham$cSpringer$d2021
215   $aXVII, 124 p.$cill.$d24 cm
620   $aCH$dCham$3VANL001889
700  1$aSeidel$bAchim$3VANV203399$01229793
712   $aSpringer <editore>$3VANV108073$4650
801   $aIT$bSOL$c20240906$gRICA
856 4 $uhttps://link.springer.com/book/10.1007/978-3-030-68940-7$zE-book ? Accesso al full-text attraverso riconoscimento IP di Ateneo, proxy e/o Shibboleth
899   $aBIBLIOTECA CENTRO DI SERVIZIO SBA$2VAN15
912   $fN
912   $aVAN00248456
950   $aBIBLIOTECA CENTRO DI SERVIZIO SBA$d15CONS      SBA EBOOK 9472                      $e15EB 9472              20220721            
996   $aHighly integrated gate drivers for Si and GaN power transistors$92854687
997   $aUNICAMPANIA