LEADER 01090nam0-22003371i-450- 001 990005433550203316 005 20010829120000.0 035 $a000543355 035 $aUSA01000543355 035 $a(ALEPH)000543355USA01 035 $a000543355 100 $a20010829d1987-------|0enac50------ba 101 $aeng 102 $aGB 105 $a||||Z 1|||| 200 1 $a<> cambridge multisectoral dynamic model of the british economy$fedited by Ter ry Barker and William Peterson 210 $aCambridge$cC.U. P.$d1987 - 486 p.: graf. ; 2 4 cm 676 $a330.94$cGeografia (Geografia economica) - Europa$v21 702 1$aPETERSON,$bWilliam 702 1$aBARKER,$bTerry 801 $aIT$bSOL$c20120104 912 $a990005433550203316 950 $aDIP.TO SCIENZE ECONOMICHE - (SA)$dDS 330.9 BAR$e5657 DISES 951 $a330.9 BAR$b5657 DISES 959 $aBK 969 $aDISES 979 $c20121027$lUSA01$h1532 979 $c20121027$lUSA01$h1612 996 $aCambridge multisectoral dynamic model of the british economy$91144257 997 $aUNISA NUM $aUSA2644 LEADER 02490nam0 22005533i 450 001 VAN00228703 005 20250124092548.495 017 70$2N$a9783030519032 100 $a20211018d2020 |0itac50 ba 101 $aeng 102 $aCH 105 $a|||| ||||| 200 1 $aIII?V Compound Semiconductors and Devices$eAn Introduction to Fundamentals$fKeh Yung Cheng 210 $aCham$cSpringer$d2020 215 $axv, 537 p.$cill.$d24 cm 410 1$1001VAN00132770$12001 $aGraduate Texts in Physics$1210 $aBerlin [etc.]$cSpringer 500 1$3VAN00228706$aIII?V Compound Semiconductors and Devices : An Introduction to Fundamentals$91881536 606 $a00A79 (77-XX)$xPhysics [MSC 2020]$3VANC023182$2MF 606 $a78-XX$xOptics, electromagnetic theory [MSC 2020]$3VANC022356$2MF 606 $a82-XX$xStatistical mechanics, structure of matter [MSC 2020]$3VANC021931$2MF 610 $aCompound Semiconductor Materials$9KW:K 610 $aCompound semiconductors$9KW:K 610 $aDevice Physics of Heterostructure Lasers$9KW:K 610 $aHeterostructure Band Diagrams$9KW:K 610 $aHigh-electron Mobility Transistor Basics$9KW:K 610 $aHigh-speed devices$9KW:K 610 $aLight-Emitting Transistors$9KW:K 610 $aLiquid Phase Epitaxy$9KW:K 610 $aMOSFETs$9KW:K 610 $aMolecular Beam Epitaxy$9KW:K 610 $aOptical Properties of Dielectric Medium$9KW:K 610 $aPhotonic Devices$9KW:K 610 $aStrained Layer Structures$9KW:K 610 $aSuperlattices and Minibands$9KW:K 610 $aThree-terminal Devices$9KW:K 610 $aTransistor Lasers$9KW:K 610 $aTwo-terminal Devices$9KW:K 610 $aVapor Phase Epitaxy$9KW:K 620 $aCH$dCham$3VANL001889 700 1$aCheng$bKeh-Yung N.$3VANV191358$0843122 712 $aSpringer $3VANV108073$4650 801 $aIT$bSOL$c20250131$gRICA 856 4 $uhttp://doi.org/10.1007/978-3-030-51903-2$zE-book ? Accesso al full-text attraverso riconoscimento IP di Ateneo, proxy e/o Shibboleth 899 $aBIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICA$1IT-CE0120$2VAN08 912 $fN 912 $aVAN00228703 950 $aBIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICA$d08DLOAD e-book 4251 $e08eMF4251 20211018 996 $aIII?V Compound Semiconductors and Devices : An Introduction to Fundamentals$91881536 997 $aUNICAMPANIA