LEADER 01089nam2 2200277 i 450 001 VAN0006799 005 20100406120000.0 010 $a88-02-04033-8 020 $aIT$b88 7302 100 $a20020822d1986 |0itac50 ba 101 $aita 102 $aIT 105 $a|||| ||||| 200 1 $aˆ1.1: ‰Norme, soggetti e rapporto giuridico$fLina Bigliazzi Geri ... [et al.] 210 $aTorino$cUtet$d1986 215 $aXIII, 435 p.$d24 cm. 461 1$1001VAN0002675$12001 $aDiritto civile$fLina Bigliazzi Geri ... [et al.]$1210 $aTorino$cUTET$d1986-$1215 $av.$d24 cm.$v1.1 620 $dTorino$3VANL000001 702 1$aBigliazzi Geri$bLina$3VANV000544 712 $aUTET $3VANV107949$4650 801 $aIT$bSOL$c20240614$gRICA 899 $aBIBLIOTECA DEL DIPARTIMENTO DI GIURISPRUDENZA$1IT-CE0105$2VAN00 912 $aVAN0006799 950 $aBIBLIOTECA DEL DIPARTIMENTO DI GIURISPRUDENZA$d00CONS XV.D.25 1.1 $e00 798444467 20020822 996 $aNorme, soggetti e rapporto giuridico$970086 997 $aUNICAMPANIA LEADER 02210nam0 22004693i 450 001 VAN00212110 005 20240806101232.747 017 70$2N$a9789811334443 100 $a20210915d2018 |0itac50 ba 101 $aeng 102 $aSG 105 $a|||| ||||| 200 1 $aElectrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors$eDoctoral Thesis accepted by the Peking University, Beijing, China$fMengqi Fu 210 $aSingapore$cSpringer$d2018 215 $axv, 102 p.$cill.$d24 cm 410 1$1001VAN00104193$12001 $aSpringer theses$erecognizing outstanding Ph.D. research$1210 $aBerlin$cSpringer$d2010- 500 1$3VAN00212116$aElectrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors$91867827 606 $a00A79 (77-XX)$xPhysics [MSC 2020]$3VANC023182$2MF 606 $a78-XX$xOptics, electromagnetic theory [MSC 2020]$3VANC022356$2MF 606 $a82-XX$xStatistical mechanics, structure of matter [MSC 2020]$3VANC021931$2MF 610 $aCrystal orientation$9KW:K 610 $aCrystal phase$9KW:K 610 $aElectrical properties$9KW:K 610 $aElectron microscope$9KW:K 610 $aField-effect transistors$9KW:K 610 $aGrowth methods$9KW:K 610 $aIn-situ material characterization$9KW:K 610 $aInAs nanowires$9KW:K 610 $aIndium Arsenide$9KW:K 610 $aMBE and MOCVD$9KW:K 610 $aUltrathin nanowires$9KW:K 620 $aSG$dSingapore$3VANL000061 700 1$aFu$bMengqi$3VANV182503$0835653 712 $aSpringer $3VANV108073$4650 801 $aIT$bSOL$c20241115$gRICA 856 4 $uhttp://doi.org/10.1007/978-981-13-3444-3$zE-book ? Accesso al full-text attraverso riconoscimento IP di Ateneo, proxy e/o Shibboleth 899 $aBIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICA$1IT-CE0120$2VAN08 912 $fN 912 $aVAN00212110 950 $aBIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICA$d08DLOAD e-book 3778 $e08eMF3778 20210915 996 $aElectrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors$91867827 997 $aUNICAMPANIA