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200 1 $aAdvanced theory of semiconductor devices$fKarl Hess
210   $aNew York$cInstitute of electrical and electronics engineers$d2000
215   $aXV, 333 p.$cill.$d24 cm
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700  1$aHess$bKarl$3VANV050103$0725313
712   $aIEEE <editore>$3VANV111634$4650
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950   $aBIBLIOTECA DEL DIPARTIMENTO DI INGEGNERIA$d05PREST     K 312                               $e05   4911              20080226            $sBuono
996   $aAdvanced theory of semiconductor devices$91415916
997   $aUNICAMPANIA