LEADER 01600nam0 2200373 i 450 001 SUN0125812 005 20200331092510.262 010 $d0.00 017 70$2N$a9789811325717 100 $a20191210d2018 |0engc50 ba 101 $aeng 102 $aSG 105 $a|||| ||||| 200 1 $a*Thermoelectrical Effect in SiC for High-Temperature MEMS Sensors$fToan Dinh, Nam-Trung Nguyen, Dzung Viet Dao 205 $aSingapore : Springer, 2018 210 $aXI$d115 p.$cill. ; 24 cm 215 $aPubblicazione in formato elettronico 410 1$1001SUN0103434$12001 $a*SpringerBriefs in applied sciences and technology$1210 $aBerlin$cSpringer. 620 $aSG$dSingapore$3SUNL000061 676 $a530.41$cFisica dello stato solido$v22 676 $a620.5$cNanotecnologia$v22 676 $a621.39$cMicroingegneria$v22 676 $a620.1$cScienza dei materiali$v22 700 1$aDinh$b, Toan$3SUNV097219$0769346 701 1$aNguyen$b, Nam-Trung$3SUNV097220$0505357 701 1$aDao$b, Dzung V.$3SUNV097221$0787308 712 $aSpringer$3SUNV000178$4650 790 1$aDao, Dzung Viet$zDao, Dzung V.$3SUNV103791 801 $aIT$bSOL$c20200921$gRICA 856 4 $uhttps://link.springer.com/book/10.1007%2F978-981-13-2571-7#toc 912 $aSUN0125812 950 $aUFFICIO DI BIBLIOTECA DEL DIPARTIMENTO DI SCIENZE E TECNOLOGIE AMBIENTALI BIOLOGICHE E FARMACEUTICHE$d17CONS e-book 2112 $e17BIB2112 304 20191210 996 $aThermoelectrical Effect in SiC for High-Temperature MEMS Sensors$91753961 997 $aUNICAMPANIA