LEADER 01463nam0 2200337 i 450 001 SUN0125753 005 20200429114236.278 010 $d0.00 017 70$2N$a9789811325359 100 $a20191204d2018 |0engc50 ba 101 $aeng 102 $aSG 105 $a|||| ||||| 200 1 $a*Formation of KNbO3 Thin Films for Self-Powered ReRAM Devices and Artificial Synapses$fTae-Ho Lee 205 $aSingapore : Springer, 2018 210 $aXXI$d98 p.$cill. ; 24 cm 215 $aPubblicazione in formato elettronico 410 1$1001SUN0104193$12001 $a*Springer theses$erecognizing outstanding Ph.D. research$1210 $aBerlin$aHeidelberg$cSpringer. 620 $aSG$dSingapore$3SUNL000061 676 $a530.417$cFisica superficiale$v22 676 $a620.1$cScienza dei materiali$v22 676 $a621.3815$cComponenti e circuiti$v22 676 $a530.4175$cFilm sottili$v22 700 1$aLee$b, Tae-Ho$3SUNV097172$0769304 712 $aSpringer$3SUNV000178$4650 801 $aIT$bSOL$c20200921$gRICA 856 4 $uhttps://link.springer.com/book/10.1007%2F978-981-13-2535-9#toc 912 $aSUN0125753 950 $aUFFICIO DI BIBLIOTECA DEL DIPARTIMENTO DI SCIENZE E TECNOLOGIE AMBIENTALI BIOLOGICHE E FARMACEUTICHE$d17CONS e-book 2112 $e17BIB2112 285 20191204 996 $aFormation of KNbO3 Thin Films for Self-Powered ReRAM Devices and Artificial Synapses$91568153 997 $aUNICAMPANIA