LEADER 01168nam0 2200325 450 001 000041827 005 20151210162247.0 010 $a978-88-15-12496-8 100 $a20151027d2008----km-y0itaa50------ba 101 0 $aita 102 $aIT 200 1 $a1789 e 1914$egli anni simbolici nella storia dello spirito politico$fJohann Plenge$gEdizione a cura di Claudio Tommasi$gPrefazione di Carlo Galli 210 $aBologna$c<> Mulino$d2008 215 $a265 p.$d22 cm 225 2 $aXX secolo 410 0$12001$aXX secolo 606 1 $aPolitica$xTeorie$yEuropa$zSec. 20 676 $a320.5$v(22. ed.)$9Scienza politica. Ideologie politiche 700 1$aPlenge,$bJohann$0315539 702 1$aGalli,$bCarlo 702 1$aTommasi,$bClaudio 801 0$aIT$bUniversità della Basilicata - B.I.A.$gREICAT$2unimarc 912 $a000041827 996 $a1789 e 1914$91531243 997 $aUNIBAS BAS $aLETTERE CAT $aSTD108$b01$c20151027$lBAS01$h1114 CAT $aMDL$b30$c20151210$lBAS01$h1622 FMT Z30 -1$lBAS01$LBAS01$mBOOK$1BASA1$APolo Storico-Umanistico$2DID$BDidattica$3FM/114275$6114275$5L114275$820151027$f04$FPrestabile Didattica LEADER 03077nam 2200649 450 001 996204768303316 005 20221206093741.0 010 $a1-282-33149-3 010 $a9786612331497 010 $a0-470-45526-8 010 $a0-470-45525-X 024 7 $a10.1002/9780470455265 035 $a(CKB)1000000000807695 035 $a(EBL)739045 035 $a(SSID)ssj0000342280 035 $a(PQKBManifestationID)11259726 035 $a(PQKBTitleCode)TC0000342280 035 $a(PQKBWorkID)10285505 035 $a(PQKB)11296433 035 $a(MiAaPQ)EBC739045 035 $a(CaBNVSL)mat05361029 035 $a(IDAMS)0b00006481178849 035 $a(IEEE)5361029 035 $a(PPN)257509054 035 $a(OCoLC)463436649 035 $a(EXLCZ)991000000000807695 100 $a20110519h20152009 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 00$aReliability wearout mechanisms in advanced CMOS technologies /$fAlvin W. Strong ... [et al.] 210 1$aPiscataway, New Jersey :$cIEEE Press,$dc2009. 215 $a1 online resource (642 p.) 225 1 $aIEEE Press series on microelectronic systems ;$v12 300 $aDescription based upon print version of record. 311 $a0-471-73172-2 320 $aIncludes bibliographical references and index. 327 $aIntroduction / Alvin W. Strong -- Dielectric characterization and reliability methodology / Ernest Y. Wu, Rolf-Peter Vollertsen, and Jordi Sun?e? -- Dielectric breakdown of gate oxides: physics and experiments / Ernest Y. Wu, Rolf-Peter Vollertsen, and Jordi Sun?e? -- Negative bias temperature instabilities in pMOSFET devices / Giuseppe LaRosa -- Hot carriers / Stewart E. Rauch, III -- Stress-induced voiding / Timothy D. Sullivan -- Electromigration / Timothy D. Sullivan. 330 $aA comprehensive treatment of all aspects of CMOS reliability wearout mechanisms This book covers everything students and professionals need to know about CMOS reliability wearout mechanisms, from basic concepts to the tools necessary to conduct reliability tests and analyze the results. It is the first book of its kind to bring together the pertinent physics, equations, and procedures for CMOS technology reliability in one place. Divided into six relatively independent topics, the book covers: Introduction to Reliability Gate Dielectric Reliability Negative Bias 410 0$aIEEE Press Series on Microelectronic Systems ;$v12 606 $aMetal oxide semiconductors, Complementary$xReliability 606 $aMicroelectronics 615 0$aMetal oxide semiconductors, Complementary$xReliability. 615 0$aMicroelectronics. 676 $a621.39732 686 $aELT 358f$2stub 686 $aZN 4960$2rvk 701 $aStrong$b Alvin Wayne$f1946-$0845570 801 0$bCaBNVSL 801 1$bCaBNVSL 801 2$bCaBNVSL 906 $aBOOK 912 $a996204768303316 996 $aReliability wearout mechanisms in advanced CMOS technologies$91887744 997 $aUNISA