01031cam2 22002653 450 SON000805220150414074346.020040107d1980 |||||ita|0103 baitaIT<<1: Le >>TragedieGiambattista Della PortaNapoliIstituto Universitario Orientale1980484 p.24cmPubblicazioni della sezione romanza dell'Istituto universitario orientaleNapoliTesti8001LAEC000195802001 *Pubblicazioni della sezione romanza dell'Istituto universitario orientale, Napoli. Testi8001SON00080512001 Teatro / Giambattista Della Porta ; A cura di Raffaele SirriITUNISOB20150414RICAUNISOBUNISOB85031191SON0008052M 102 Monografia moderna SBNM850000297-1SI31191ACQUISTOrovitoUNISOBUNISOB20140707132718.020140707132739.0rovitoTragedie961934UNISOB01671oam 2200433 a 450 991070210620332120121009115052.0(CKB)5470000002425081(OCoLC)812275777(EXLCZ)99547000000242508120121009d1983 ua 0engurbn|||||||||txtrdacontentcrdamediacrrdacarrierSilicon carbide, a high temperature semiconductor[electronic resource] /J. Anthony PowellCleveland, Ohio :National Aeronautics and Space Administration, Lewis Research Center,[1983]1 online resource (5 pages) illustrationsNASA technical memorandum ;83514Title from title screen (viewed Oct. 9, 2012).Prepared for the Cleveland Electronic Conference (CECON '83) sponsored by the Institute of Electrical and Electrotics Engineers, Inc. Cleveland, Ohio, October 4-6, 1983.Includes bibliographical references (page 5).High temperature environmentsnasatSemiconductor devicesnasatSilicon carbidesnasatHigh temperature environments.Semiconductor devices.Silicon carbides.Powell J. Anthony1422358Lewis Research Center.Cleveland Electrical/Electronics Conference and Exposition(1983)GPOGPOGPOBOOK9910702106203321Silicon carbide, a high temperature semiconductor3546434UNINA