01343cam0 2200337 450 E60020004772420230608093444.020090402d1980 |||||ita|0103 bagerDEWerke in zwei BändenFriedrich SchlegelBerlin-WeimarAufbau Verlag19802 v.18 cmBibliothek Deutscher Klassiker001LAEC000250972001 *Bibliothek Deutscher KlassikerSchlegel, Friedrich : vonSOBA00011061070444346ITUNISOB20230608RICAUNISOBUNISOB83059154UNISOB83032190UNISOB83059155UNISOB83032191E600200047724M 102 Monografia moderna SBNM830000984-1Si59154acquistobethUNISOBUNISOB20090402105740.020230607145956.0bethb830000347-1Si32190acquistobethUNISOBUNISOB20080714093848.020230608093423.0bethb830000984-2SI59155acquistobethbUNISOBUNISOB20230607145957.020230607150014.0bethb830000347-2SI32191acquistobethbUNISOBUNISOB20230608093426.020230608093444.0bethbWerke in zwei Bänden3221498UNISOB02942nam 22005655 450 991068334900332120251107152140.09789819901579(electronic bk.)978981990156210.1007/978-981-99-0157-9(MiAaPQ)EBC7220720(Au-PeEL)EBL7220720(OCoLC)1374431261(DE-He213)978-981-99-0157-9(PPN)269097325(CKB)26347415500041(EXLCZ)992634741550004120230327d2023 u| 0engurcnu||||||||txtrdacontentcrdamediacrrdacarrierMultigate Transistors for High Frequency Applications /by K. Sivasankaran, Partha Sharathi Mallick1st ed. 2023.Singapore :Springer Nature Singapore :Imprint: Springer,2023.1 online resource (98 pages)Springer Tracts in Electrical and Electronics Engineering,2731-4219Print version: Sivasankaran, K. Multigate Transistors for High Frequency Applications Singapore : Springer,c2023 9789819901562 Includes bibliographical references.1. Introduction -- 2. Rf Transistor and Design Challenges -- 3. Radio Frequency Stability Performance of Dg Mosfet -- 4. Radio Frequency Stability Performance of Dg Tunnel Fet -- 5. Radio Frequency Stability Performance of Finfet -- 6. Radio Frequency Stability Performance Of Silicon Nanowire Transistor -- 7. References.This book discusses the evolution of multigate transistors, the design challenges of transistors for high-frequency applications, and the design and modeling of multigate transistors for high-frequency applications. The contents particularly focus on the cut-off frequency and maximum oscillation frequency of different multigate structures. RF stability modeling for multigate transistors is presented, which can help to understand the relation between the small-signal parameter and the physical parameter of the device for optimization. This is a useful reference to those in academia and industry.Springer Tracts in Electrical and Electronics Engineering,2731-4219Computer networksTelecommunicationComputer Communication NetworksMicrowaves, RF Engineering and Optical CommunicationsComputer networks.Telecommunication.Computer Communication Networks.Microwaves, RF Engineering and Optical Communications.780Sivasankaran K.1977-1378586Mallick Partha SharathiMiAaPQMiAaPQMiAaPQ9910683349003321Multigate transistors for high frequency applications3417288UNINA