02525nam a2200325Ii 4500991003233859707536070802s2004 ne a sb 001 0 eng d97801208848720120884879b13652771-39ule_instBibl. Dip.le Aggr. Ingegneria Innovazione - Sez. Ingegneria Innovazioneeng621.322Magnetoelectronics[e-book] /edited by Mark JohnsonAmsterdam ;San Diego, CA :Elsevier,2004xii, 396 p. :ill. (some col.) ;25 cmIncludes bibliographical references and indexIntroduction to magnetoelectronics / Mark Johnson -- Spin valves / B. Dieny -- Spin-polarized tunneling / Jagadeesh S. Moodera and Robert H. Meservey -- Magnetoresistive random access memories / James Daughton -- Magnetic tunnel junction based magnetoresistive random access memory / Johan Åkerman ... [et al.] -- Broader digital electronics applications of magnetoelectronics / Mark Johnson -- Magnetoresistive DNA chips / P.P. Freitas ... [et al.]The arrival of the information age took most people by surprise including scientists and technologists. Today, research on better, smaller, and faster ways to store and transfer information continues to grow, and growing fast within this scope is the field of magnetoelectronics. With its possibilities as a magnetic storage technology capable of overcoming the vulnerabilities of CMOS (complementary metal on oxide semiconductor), magnetoelectronics promises to be an important installation in the information eraElectronic reproduction.Amsterdam :Elsevier Science & Technology,2007.Mode of access: World Wide Web.System requirements: Web browser.Title from title screen (viewed on July 25, 2007).Access may be restricted to users at subscribing institutionsSpintronicsMagnetic memory (Computers)Johnson, Mark BrianOriginal01208848799780120884872(DLC) 2006276088(OCoLC)57588639Referexhttp://www.sciencedirect.com/science/book/9780120884872An electronic book accessible through the World Wide Web; click for informationPublisher descriptionhttp://catdir.loc.gov/catdir/enhancements/fy0646/2006276088-d.html.b1365277103-03-2224-01-08991003233859707536Magnetoelectronics1212841UNISALENTOle02624-01-08m@ -engne 00