01014nam a22002531i 450099100285380970753620040407133114.0040624s1898 xxu|||||||||||||||||eng b12987955-39ule_instARCHE-094563ExLDip.to Beni CulturaliitaA.t.i. Arché s.c.r.l. Pandora Sicilia s.r.l.938.5Ferguson, William Scott166478The Athenian secretaries /by William Scott FergusonIthaca (N.Y.) :published for the Cornell university by the Macmillan company,1898IV, 80 p. ;24 cmCornell studies in classical philology ;7AtenePoliticaAntichità.b1298795502-04-1412-07-04991002853809707536LE001 AN II 6212001000047109le001C. 1-E0.00-l- 00000.i1359258012-07-04Athenian secretaries284089UNISALENTOle00112-07-04ma -engxxu4104043nam 2200601Ia 450 991101930460332120200520144314.01-282-69013-297866126901360-470-61181-20-470-61039-5(CKB)2550000000005873(EBL)477661(OCoLC)520990481(SSID)ssj0000354751(PQKBManifestationID)11275384(PQKBTitleCode)TC0000354751(PQKBWorkID)10315832(PQKB)11169578(MiAaPQ)EBC477661(EXLCZ)99255000000000587320090428d2009 uy 0engur|n|---|||||txtccrSilicon non-volatile memories paths of innovation /Barbara De SalvoLondon, UK ISTE ;Hoboken, NJ, USA J. Wiley20091 online resource (248 p.)ISTE ;v.144Revison of author's thesis (Ph. D.)--Joseph Fourier University of Grenoble, 2007.1-84821-105-8 Includes bibliographical references and index.Silicon Non-Volatile Memories; Table of Contents; Preface; Chapter 1. Introduction; Chapter 2. Semiconductor Industry Overview; 2.1. The cyclical semiconductor market; 2.2. The leading IC companies; 2.3. The world IC market distribution; 2.4. Semiconductor sales by IC devices; 2.5. The semiconductor memory market; 2.6. The impressive price decline of IC circuits; 2.7. Moore's Law, the ITRS and their economic impacts; 2.8. Exponential growth of manufacturing and R&D costs; 2.9. The structural evolution of the semiconductor industry; 2.10. Consolidation of the semiconductor memory sector2.11. Conclusions2.12. References; Chapter 3. Research on Advanced Charge Storage Memories; 3.1. Key features of Flash technology; 3.2. Flash technology scaling; 3.3. Innovative paths in silicon NVM technologies; 3.4. Research on advanced charge storage memories; 3.4.1. Silicon nanocrystal memories; 3.4.2. Silicon nanocrystal memories with high-k IPDs; 3.4.3. Hybrid silicon nanocrystal/SiN memories with high-k IPDs; 3.4.4. Silicon nanocrystal double layer memories with high-k IPDs; 3.4.5. Metal nano-dots coupled with organic templates; 3.4.6. High-k IPD-based memories3.4.7. High-k/metal gate stacks for "TANOS" memories3.4.8. FinFlash devices; 3.4.9. Molecular charge-based memories; 3.4.10. Effects of the few electron phenomena; 3.5. Conclusions; 3.6. References; Chapter 4. Future Paths of Innovation; 4.1. 3D integration of charge-storage memories; 4.2. Alternative technologies; 4.2.1. Ferro RAMs; 4.2.2. Magnetic RAMs; 4.2.3. Phase-change RAMs; 4.2.4. Conductive bridging RAMs; 4.2.5. Oxide resistive RAMs; 4.2.6. New crossbar architectures; 4.3. Conclusion; 4.4. References; Chapter 5. Conclusions; 5.1. References; IndexThis book provides a comprehensive overview of the different technological approaches currently being studied to fulfill future memory requirements. Two main research paths are identified and discussed. Different "evolutionary paths" based on new materials and new transistor structures are investigated to extend classical floating gate technology to the 32 nm node. "Disruptive paths" are also covered, addressing 22 nm and smaller IC generations. Finally, the main factors at the origin of these phenomena are identified and analyzed, providing pointers on future research activities and developmeISTESemiconductor storage devicesFlash memories (Computers)Semiconductor storage devices.Flash memories (Computers)621.381621.39/732De Salvo Barbara1841820MiAaPQMiAaPQMiAaPQBOOK9911019304603321Silicon non-volatile memories4421684UNINA