01233nam a2200289 i 4500991001158979707536050719s1999 nyua b 001 0 eng d0471297003b13329285-39ule_instDip.to Ingegneria dell'Innovazioneeng621.381521Liu, William119893Fundamentals of III-V devices :HBTs, MESFETs, and HFETs/HEMTs /William LiuNew York [etc] :Wiley e Sons,c1999xii, 505 p. :ill. ;25 cm"A Wiley-Interscience publication."Includes bibliographical references and indexBipolar transistorsField-effect transistorsMetal semiconductor field-effect transistorsTable of Contentshttp://www.loc.gov/catdir/toc/onix04/98038918.htmlTable of contents.b1332928507-04-2219-07-05991001158979707536LE026 621.3815 LIU 01.01 199912026000021058le026Prof. De Vittorio / BibliotecapE94.68-l- 41110.i1410907419-07-05Fundamentals of III-V devices1105026UNISALENTOle02619-07-05ma -engnyu00