01339nam a2200337 i 450099100096779970753620020507104531.0960710s1967 us ||| | eng b10155016-39ule_instLE00639921ExLDip.to Fisicaita53.7.8621.3.2.5621.3817TK7874Burger, Robert M.462144Fundamentals of silicon integrated device technology /edited by Robert M. Burger and R.P. DonovanEnglewood Cliffs, N.J. :Prentice-Hall,1967-19682 v. (495, 480 p.) ;23 cm.Solid state physical electronics seriesVol. 1 : Oxidation, diffusion and epitaxy.Vol. 2 : Bipolar and unipolar transistors.MicroelectronicsDonovan, R.P..b1015501617-02-1727-06-02991000967799707536LE006 621.3.2 BURV. 112006000053952le006-E0.00-l- 00000.i1018738827-06-02LE006 621.3.2 BURV. 212006000053969le006-E0.00-l- 00000.i1018739x27-06-02Fundamentals of silicon integrated device technology187181UNISALENTOle00601-01-96ma -engus 02