01682nam 2200433 n 450 99639439100331620221108090000.0(CKB)4940000000121948(EEBO)2240932265(UnM)99868814(EXLCZ)99494000000012194819940706d1660 uy |engurbn||||a|bb|Honor rediviuus [sic][electronic resource] or An analysis of honor and armoryby Matt: Carter EsqLondon printed for Henry Herringman 1660 and are to be sould by Henry Herringman at the Ancker on the lowest side of the New-Exchange[1660][10], 256, 247-251, [1] p., [8] leaves of plates coats of arms (woodcuts)The title page is engraved and signed "R. Gaywood fecit"; the plate is an altered version of the one first used in Wing C658.With two handwritten pages at end.Annotation on Thomason copy: "June".Reproduction of the original in the British Library.eebo-0018Orders of knighthood and chivalryEnglandEarly works to 1800HeraldryGreat BritainEarly works to 1800NobilityGreat BritainEarly works to 1800Orders of knighthood and chivalryHeraldryNobilityCarter Matthewfl. 1660.1007510Gaywood Richardfl. 1650-1680,Cu-RivESCu-RivESCStRLINCu-RivESWaOLNBOOK996394391003316Honor rediviuus2396903UNISA02476nam0 22004693i 450 VAN024876720230529021332.421N978303035993520220729d2020 |0itac50 baengCH|||| |||||Charge Transport in Low Dimensional Semiconductor StructuresThe Maximum Entropy ApproachVito Dario Camiola, Giovanni Mascali, Vittorio RomanoChamSpringer2020xvi, 337 p.ill.24 cm001VAN00670482001 Mathematics in industry210 Berlin [etc.]Springer31001VAN01149542001 ˆThe ‰European Consortium for Mathematics in Industry. Subseries210 Berlin [etc.]SpringerVAN0248769Charge Transport in Low Dimensional Semiconductor Structures290242782-XXStatistical mechanics, structure of matter [MSC 2020]VANC021931MF35Q55NLS equations (nonlinear Schroedinger equations) [MSC 2020]VANC022712MF82D37Statistical mechanical studies of semiconductors [MSC 2020]VANC023098MF35Q20Boltzmann equations [MSC 2020]VANC033629MF35Q82PDEs in connection with statistical mechanics [MSC 2020]VANC033951MF82D80Statistical mechanical studies of nanostructures and nanoparticles [MSC 2020]VANC034005MFCharge transport in confined structureKW:KCharge transport in grapheneKW:KDG-MOSFETKW:KMaximum Entropy PrincipleKW:KSimulation of electron devicesKW:KCHChamVANL001889CamiolaVito DarioVANV203573947750MascaliGiovanniVANV2035741251988RomanoVittorioVANV09332467761Springer <editore>VANV108073650ITSOL20240614RICAhttp://doi.org/10.1007/978-3-030-35993-5E-book – Accesso al full-text attraverso riconoscimento IP di Ateneo, proxy e/o ShibbolethBIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICAIT-CE0120VAN08NVAN0248767BIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICA08CONS e-book 4586 08eMF4586 20220729 Charge Transport in Low Dimensional Semiconductor Structures2902427UNICAMPANIA