02023nam 2200397Ia 450 99639050770331620221107142606.0(CKB)1000000000651399(EEBO)2264202157(OCoLC)13088619(EXLCZ)99100000000065139919860131d1696 uy |laturbn||||a|bb|Decreti Oxoniensis vindicatio in tribus ad modestum ejusdem examinatorem modestioribus epistolis, a theologo transmarino[electronic resource][London? s.n.] Excusa1696[16], 92 pThe text of the decree, dated Nov. 25, 1695, with title "In conventu D. Vice-Cancellarii ..." prelim. p. [3-4]This decree was not issued by The University of Oxford as an official document.This tract, in answer to Wm. Sherlock's "Modest examination of the authority and reasons of the late decree", has been attributed by Wing and Trinity College, Dublin, to Robert South. Bodleian, BM and McAlpin, as well as R. Wallace in his "Antitrinitarian Biography", 1850 I:344, have made no attributions.It appears Wing gave a separate number to South's answer to Sherlock and to the decree; however, both items appear in the same monograph with the decree appearing in the preliminary material of South's work. Another edition of the decree (O873) appears in some issues of South's work.Reproduction of original in Huntington Library.Entry for S4732 cancelled in Wing (2nd ed.).eebo-0113TrinityEarly works to 1800TrinitySouth Robert1634-1716.1004121University of Oxford.EAAEAAm/cWaOLNBOOK996390507703316Decreti Oxoniensis vindicatio in tribus ad modestum ejusdem examinatorem modestioribus epistolis, a theologo transmarino2306203UNISA03904nam 2200469 450 99649986390331620230320050041.09789811968723(electronic bk.)9789811968716(MiAaPQ)EBC7133281(Au-PeEL)EBL7133281(CKB)25299342900041(PPN)266350585(EXLCZ)992529934290004120230320d2022 uy 0engurcnu||||||||txtrdacontentcrdamediacrrdacarrierStructure and electronic properties of ultrathin in films on Si(111) /Shigemi TerakawaSingapore :Springer,[2022]©20221 online resource (83 pages)Springer thesesPrint version: Terakawa, Shigemi Structure and Electronic Properties of Ultrathin in Films on Si(111) Singapore : Springer,c2022 9789811968716 Includes bibliographical references.Intro -- Supervisor's Foreword -- Abstract -- Acknowledgements -- Contents -- 1 Introduction -- 1.1 Ultrathin Metal Films -- 1.2 Thin Indium Films on Si(111) -- 1.3 In/Si(111) Surface Superstructures -- 1.4 Bonding Between Metal Layers and Substrates -- 1.5 Outline of the Thesis -- References -- 2 Experimental Methods -- 2.1 Low-Energy Electron Diffraction (LEED) -- 2.1.1 Kinematic Theory -- 2.1.2 Dynamical Theory -- 2.1.3 Apparatus -- 2.2 Scanning Tunneling Microscopy (STM) -- 2.2.1 Theory and Apparatus -- 2.3 Angle-Resolved Photoelectron Spectroscopy (ARPES) -- 2.3.1 Theory -- 2.3.2 Apparatus -- 2.4 Four-Point-Probe (4PP) Conductivity Measurements -- 2.4.1 Theory and Apparatus -- 2.5 Experiments -- 2.5.1 Chamber 1 (ARPES, LEED) -- 2.5.2 Chamber 2 (ARPES, LEED) -- 2.5.3 Chamber 3 (STM) -- 2.5.4 Chamber 4 (4PP Conductivity Measurements, LEED) -- 2.5.5 Chamber 5 (LEED) -- 2.5.6 Samples -- References -- 3 Structure and Electronic Properties of In Single-Layer Metal on Si(111) -- 3.1 Introduction -- 3.2 Preparation of the In/Si(111) left parenthesis StartRoot 7 EndRoot times StartRoot 3 EndRoot right parenthesis( sqrt7 timessqrt3 )-Hex and left parenthesis StartRoot 7 EndRoot times StartRoot 3 EndRoot right parenthesis( sqrt7 timessqrt3 )-Striped Phases -- 3.3 The Atomic Structure of the In/Si(111) ``left parenthesis StartRoot 7 EndRoot times StartRoot 3 EndRoot right parenthesis( sqrt7 timessqrt3 )''-Hex Phase -- 3.3.1 LEED and STM Observations -- 3.3.2 Structure Model -- 3.3.3 First-Principles Calculation -- 3.4 Electronic Structure and Phase Transition of the Indium Monolayer on Si(111) -- 3.4.1 Electronic Structure of the In/Si(111) Hex Phase -- 3.4.2 Phase Transition of the In/Si(111) Hex Phase -- 3.5 Summary -- References -- 4 Structure and Electronic Properties of Ultrathin (In, Mg) Films on Si(111) -- 4.1 Introduction.4.2 Structure Change by Mg Deposition onto the In/Si(111) left parenthesis StartRoot 7 EndRoot times StartRoot 3 EndRoot right parenthesis( sqrt7 timessqrt3 )-Rect Phase -- 4.2.1 LEED and STM Observations -- 4.2.2 Structure Determination by First-Principles Calculation -- 4.3 The Electronic Structure of the (In, Mg)/Si(111) left parenthesis StartRoot 3 EndRoot times StartRoot 3 EndRoot right parenthesis( sqrt3 timessqrt3 ) Phase -- 4.3.1 ARPES Experiments -- 4.3.2 Band Calculation -- 4.4 Summary -- References -- 5 Conclusions -- Appendix Curriculum Vitae.Springer theses.Metallic filmsSemiconductor filmsMetallic films.Semiconductor films.621.38171Terakawa Shigemi1265780MiAaPQMiAaPQMiAaPQ996499863903316Structure and Electronic Properties of Ultrathin in Films on Si(111)2968231UNISA