05467nam 2200649Ia 450 991014269240332120170815120751.01-280-26896-497866102689620-470-09034-00-470-09033-2(CKB)1000000000328788(EBL)232697(OCoLC)77517251(SSID)ssj0000229286(PQKBManifestationID)11190705(PQKBTitleCode)TC0000229286(PQKBWorkID)10187652(PQKB)10172489(MiAaPQ)EBC232697(EXLCZ)99100000000032878820040916d2005 uy 0engur|n|---|||||txtccrProperties of group-IV, III-V and II-VI semiconductors[electronic resource] /Sadao AdachiChichester, England ;Hoboken, NJ John Wiley & Sonsc20051 online resource (407 p.)Wiley series in materials for electronic and optoelectronic applicationsDescription based upon print version of record.0-470-09032-4 Includes bibliographical references and index.Properties of Group-IV, III-V and II-VI Semiconductors; Contents; Series Preface; Preface; Acknowledgments/Dedication; 1 Structural Properties; 1.1 Ionicity; 1.1.1 Definition; (a) Phillips ionicity; (b) Pauling ionicity; (c) Harrison ionicity; 1.1.2 Ionicity Value; 1.2 Elemental Isotopic Abundance and Molecular Weight; 1.2.1 Elemental Isotopic Abundance; 1.2.2 Molecular Weight; 1.3 Crystal Structure and Space Group; 1.3.1 Crystal Structure; (a) Diamond, zinc-blende and wurtzite structures; (b) Hexagonal and rhombohedral structures; (c) Rocksalt structure; 1.3.2 Space Group1.4 Lattice Constant and Related Parameters1.4.1 Lattice Constant; (a) Room-temperature value; (b) Near-neighbor distance; (c) External perturbation effect; 1.4.2 Molecular and Crystal Densities; 1.5 Structural Phase Transitions; 1.6 Cleavage; 1.6.1 Cleavage Plane; 1.6.2 Surface Energy; (a) Theoretical value; (b) Experimental value; References; 2 Thermal Properties; 2.1 Melting Point and Related Parameters; 2.1.1 Phase Diagram; 2.1.2 Melting Point; 2.2 Specific Heat; 2.3 Debye Temperature; 2.4 Thermal Expansion Coefficient; 2.5 Thermal Conductivity and Diffusivity; 2.5.1 Thermal Conductivity2.5.2 Thermal DiffusivityReferences; 3 Elastic Properties; 3.1 Elastic Constant; 3.1.1 General Remarks; 3.1.2 Room-temperature Value; 3.1.3 External Perturbation Effect; (a) Temperature effect; (b) Pressure effect; 3.2 Third-order Elastic Constant; 3.3 Young's Modulus, Poisson's Ratio and Similar Properties; 3.3.1 Young's Modulus and Poisson's Ratio: Cubic Lattice; 3.3.2 Bulk Modulus, Shear Modulus and Similar Properties: Cubic Lattice; 3.3.3 Young's Modulus and Poisson's Ratio: Hexagonal Lattice; 3.3.4 Bulk Modulus, Shear Modulus and Similar Properties: Hexagonal Lattice; 3.4 Microhardness3.5 Sound VelocityReferences; 4 Lattice Dynamic Properties; 4.1 Phonon Dispersion Relation; 4.1.1 Brillouin Zone; (a) Face-centered cubic lattice; (b) Hexagonal lattice; (c) Rhombohedral lattice; 4.1.2 Phonon Dispersion Curve; (a) Cubic lattice; (b) Hexagonal lattice; 4.1.3 Phonon Density of States; 4.2 Phonon Frequency; 4.2.1 Room-temperature Value; 4.2.2 External Perturbation Effect; (a) Temperature effect; (b) Pressure effect; 4.3 Mode Grüneisen Parameter; 4.4 Phonon Deformation Potential; 4.4.1 Cubic Lattice; 4.4.2 Hexagonal Lattice; References5 Collective Effects and Some Response Characteristics5.1 Piezoelectric and Electromechanical Constants; 5.1.1 Piezoelectric Constant; (a) Piezoelectric stress constant; (b) Piezoelectric strain constant; 5.1.2 Electromechanical Coupling Constant; 5.2 Fröhlich Coupling Constant; References; 6 Energy-band Structure: Energy-band Gaps; 6.1 Basic Properties; 6.1.1 Energy-band Structure; (a) Diamond-type semiconductor; (b) Zinc-blende-type semiconductor; (c) Wurtzite-type semiconductor; 6.1.2 Electronic Density of States; 6.2 E(0)-gap Region; 6.2.1 Effective G-point Hamiltonian6.2.2 Room-temperature ValueAlmost all the semiconductors of practical interest are the group-IV, III-V and II-VI semiconductors and the range of technical applications of such semiconductors is extremely wide.The purpose of this book is twofold:* to discuss the key properties of the group-IV, III-V and II-VI semiconductors* to systemize these properties from a solid-state physics aspectThe majority of the text is devoted to the description of the lattice structural, thermal, elastic, lattice dynamic, electronic energy-band structural, optical and carrier transport properties of these semiconductors. SomeWiley series in materials for electronic and optoelectronic applications.SemiconductorsMaterialsSemiconductorsAnalysisElectronic books.SemiconductorsMaterials.SemiconductorsAnalysis.621.3815/2621.38152Adachi Sadao1950-869791MiAaPQMiAaPQMiAaPQBOOK9910142692403321Properties of group-IV, III-V and II-VI semiconductors2072049UNINA02354nam 2200505Ia 450 99638474840331620200818213618.0(CKB)4940000000068046(EEBO)2240922459(UnM)99897738e(UnM)99897738(EXLCZ)99494000000006804619940720d1651 uy |engurbn||||a|bb|Cottoni posthuma[electronic resource] divers choice pieces of that renovvned antiquary Sir Robert Cotton, Knight and Baronet, preserved from the injury of time, and expos'd to public light, for the benefit of posterity, by J.H. Esq;London printed by Francis Leach, for Henry Seile over against St. Dunstans Church in Fleetestreet1651[8], 351, [5], 27, [1] pJ.H. = James Howell, who signs the editor's dedication.Signatures: A⁴ B-Z [par.]-² A.Consists of 17 pieces; each, except the first, has a separate title page dated 1651.Includes "The danger wherein this kingdome now standeth, and the remedy", not mentioned in list of contents at end of "To the reader".Leaf [par.]1 is blank except for a leaf on recto."A short view of the long life and reign of Henry the Third" has separate Wing and Thomason numbers, and separate pagination and register, with imprint "printed by William Bentley, for William Shears". However, this edition was apparently never issued separately.Annotation on Thomason copy: "Aprill 30".Reproduction of original in the Henry E. Huntington Library.eebo-0113AmbassadorsEarly works to 1800Prerogative, RoyalEnglandEarly works to 1800Wager of battleEarly works to 1800Great BritainPolitics and government1603-1714Early works to 1800AmbassadorsPrerogative, RoyalWager of battleCotton RobertSir,1571-1631.1001387Howell James1594?-1666.508777Cu-RivESCu-RivESCStRLINCu-RivESWaOLNBOOK996384748403316Cottoni posthuma2340791UNISA