01822nam 2200361 450 99627988470331620231206041513.0(CKB)1000000000035473(NjHacI)991000000000035473(EXLCZ)99100000000003547320231206d2003 uy 0engur|||||||||||txtrdacontentcrdamediacrrdacarrierANSI N42.31-2003 American National Standard for Measurement Procedures for Resolution and Efficiency of Wide-Band Gap Semiconductor Detectors of Ionizing Radiation /IEEENew York :IEEE,[2003]1 online resource (vii, 33 pages) illustrationsIncludes index.0-7381-3799-5 Standard measurement and test procedures are established for wide-bandgap semiconductor detectors such as cadmium telluride (CdTe), cadmium-zinc-telluride (CdZnTe), and mercuric iodide (HgI2) that can be used at room temperature for the detection and quantitative characterization of gamma-rays, X-rays, and charged particles. Standard terminology and descriptions of the principal features of the detectors are included. Included in this standard is an annex on interfering electromagnetic noise, which is a factor in such measurements.ANSI N42.31-2003: American National Standard for Measurement Procedures for Resolution and Efficiency of Wide-Band Gap Semiconductor Detectors of Ionizing RadiationIonizing radiationIonizing radiation.539.2Institute of Electrical and Electronics Engineers,NjHacINjHaclDOCUMENT996279884703316ANSI N42.31-20032580858UNISA