02192oam 2200553zu 450 99621259370331620210807003355.0(CKB)111026746722772(SSID)ssj0000395085(PQKBManifestationID)12154915(PQKBTitleCode)TC0000395085(PQKBWorkID)10449853(PQKB)10646649(EXLCZ)9911102674672277220160829d1998 uy engtxtccr1998 Fourth International High Temperature Electronics Conference : HITEC, Albuquerque, New Mexico, USA, June 14-18, 1998[Place of publication not identified]The Institute of Electrical and Electronics Engineers Inc1998Bibliographic Level Mode of Issuance: Monograph0-7803-4540-1 ElectronicsMaterialsCongressesHeat resistant materialsCongressesSilicon-on-insulator technologyCongressesField-effect transistorsCongressesGallium arsenideCongressesElectrical & Computer EngineeringHILCCEngineering & Applied SciencesHILCCElectrical EngineeringHILCCElectronicsMaterialsCongressesHeat resistant materialsSilicon-on-insulator technologyCongressesField-effect transistorsCongressesGallium arsenideCongressesElectrical & Computer EngineeringEngineering & Applied SciencesElectrical Engineering621.381/04Air Force Research Laboratory (Wright-Patterson Air Force Base, Ohio)IEEE Electron Devices SocietyComponents, Packaging & Manufacturing Technology SocietyInternational High Temperature Electronics ConferencePQKBPROCEEDING9962125937033161998 Fourth International High Temperature Electronics Conference : HITEC, Albuquerque, New Mexico, USA, June 14-18, 19982507918UNISA