01806nam 2200445 450 99619996270331620230422042128.0(CKB)111026746754394(SSID)ssj0000396583(PQKBManifestationID)12162932(PQKBTitleCode)TC0000396583(PQKBWorkID)10343481(PQKB)10765548(WaSeSS)IndRDA00119474(EXLCZ)9911102674675439420200305d1999 uy 0engur|||||||||||txtccrSISPAD '99 1999 International Conference on Simulation of Semiconductor Processes and Devices : September 6-8, 1999, Kyoto Research Park, Kyoto, Japan /co-sponsored by Japan Society of Applied Physics, IEEE Electron Devices Society ; in cooperation with the Institute of Electronics, Information and Communication Engineers, IEEE Electron Devices Tokyo ChapterPiscataway, New Jersey :Institute of Electrical and Electronics Engineers,1999.1 online resource (98 pages)Bibliographic Level Mode of Issuance: Monograph4-930813-98-0 SemiconductorsMathematical modelsCongressesSemiconductorsMathematical models621.38152015118Oyo Butsuri Gakkai,IEEE Electron Devices Society,Denshi Joho Tsushin Gakkai (Japan),Institute of Electrical and Electronics Engineers.Electron Devices Group,International Conference on Simulation of Semiconductor Processes and DevicesWaSeSSWaSeSSPROCEEDING996199962703316SISPAD '992539351UNISA