01193nam--2200409---450-99000160476020331620060405150024.0000160476USA01000160476(ALEPH)000160476USA0100016047620040426d1980----km-y0itay0103----baitaIT||||||||001yySibilla Aleramodi Marina Federzoni, Isabella Pezzini e Maria Pia PozzatoFirenzeLa Nuova Italia1980123 p.17 cm<<Il>> Castoro1612001<<Il>> Castoro1612001001-------2001Aleramo, Sibilla853.9FEDERZONI,Marina446953PEZZINI,Isabella140399POZZATO,Maria Pia143919ITsalbcISBD990001604760203316VI.3.B. 2983(V E Coll. 1/161)88429 L.M.V EBKUMASIAV21020040426USA011637SIAV21020040426USA011637COPAT59020060405USA011500Sibilla Aleramo102876UNISA01733nam 2200397z- 450 9910346908503321202102111000021579(CKB)4920000000101437(oapen)https://directory.doabooks.org/handle/20.500.12854/40629(oapen)doab40629(EXLCZ)99492000000010143720202102d2011 |y 0engurmn|---annantxtrdacontentcrdamediacrrdacarrierAlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applicationsKIT Scientific Publishing20111 online resource (XI, 230 p. p.)Karlsruher Forschungsberichte aus dem Institut für Hochfrequenztechnik und Elektronik.3-86644-615-2 This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.Technology: general issuesbicsscAlGaN/GaN HEMTMMIC designpower amplifierpower-added efficiencyX-bandTechnology: general issuesKühn Jutta1318410BOOK9910346908503321AlGaN3033210UNINA