01090nam--2200373---450-99000126149020331620031114155100.00-471-86833-7000126149USA01000126149(ALEPH)000126149USA0100012614920031114d1983----km-y0itay0103----baengUSa|||||||001yyVLSI fabrication principlessilicon and gallium arsenideSorab K. GhandhiNew York [etc.]Wiley & Sonscopyr. 1983XI, 665 p.ill.24 cm20012001001-------2001Circuiti integrati complessiSilicioArsenuro di gallio621.38171GHANDHI,Sorab K.5531ITsalbcISBD990001261490203316621.381 71 GHA114 Ing.621BKTECSIAV11020031114USA011551PATRY9020040406USA011730VLSI fabrication principles109914UNISA