01194nam--2200409---450-99000031100020331620050629150359.00-19-824637-50031100USA010031100(ALEPH)000031100USA01003110020001206d1980----km-y0itay0103----baenggb||||||||001yyEssays on actions and eventsDonald DavidsonOxfordClaren1980XVI, 304 p.21 cmAzione<filosofia>Evento<filosofia>Filosofia del linguaggio128.4DAVIDSON,Donald287581ITsalbcISBD990000311000203316II.1.D. 3038(IV C 3084)155720 L.M.IV C00008082BKUMATAMI4020001206USA011738TAMI4020001207USA011049TAMI4020001213USA01120820020403USA011639PATRY9020040406USA011622COPAT39020050629USA011503Essays on actions and events49824UNISA01403nam0 22003373i 450 UBO131106620251003044420.0089006749X20091019d1995 ||||0itac50 baengusz01i xxxe z01nElectrical and thermal characterization of MESFETs, HEMTs, and HBTsRobert AnholtBoston [etc.]Artech House©1995X, 310 p.24 cm.ˆThe ‰Artech House microwave library001MIL01366962001 ˆThe ‰Artech House microwave libraryTransistori a effetto di campoModelli matematiciFIRNAPC243416I621.3815ELETTRONICA. COMPONENTI E CIRCUITI14621.3815284Transistor e tiristor. Transistor a effetto di campo22Anholt, RobertUBOV509775070754349Anholt, Robert Edward <1949- >NAPV112645Anholt, RobertITIT-00000020091019IT-BN0095 NAP 01SALA DING $UBO1311066Biblioteca Centralizzata di Ateneo1 v. 01SALA DING 621.3815 ANH.el 0102 0000022765 VMA A4 1 v.Y 1996022119960221 01Electrical and thermal characterization of MESFETs, HEMTs, and HBTs1517818UNISANNIO