05461nam 2200685Ia 450 991101910120332120200520144314.09786612010477978128201047512820104769783527614639352761463X97835276146223527614621(CKB)1000000000579466(EBL)481735(SSID)ssj0000134231(PQKBManifestationID)11147964(PQKBTitleCode)TC0000134231(PQKBWorkID)10055469(PQKB)11269360(MiAaPQ)EBC481735(OCoLC)264714639(Perlego)2756825(EXLCZ)99100000000057946619970609d1997 uy 0engur|n|---|||||txtccrCVD of compound semiconductors precursor synthesis, development and applications /Anthony C. Jones, Paul O'BrienWeinheim, Germany ;Cambridge VCHc19971 online resource (354 p.)Description based upon print version of record.9783527292943 3527292942 Includes bibliography and index.CVD of Compound Semiconductors; Contents; 1 Basic Concepts; 1.1 Introduction; 1.2 Compound Semiconductors; 1.3 Description of the Band Gap; 1.3.1 Density of States; 1.3.2 Extrinsic Semiconductors; 1.3.3 Characterizing Carrier Concentrations; 1.3.4 Direct and Indirect Band Gaps; 1.3.5 Photoluminescence Spectroscopy; 1.3.6 p-n Junctions; 1.4 General Structural Properties of Compound Semiconductors; 1.5 Applications of III-V Semiconductors; 1.5.1 Light Emitting Diodes; 1.5.2 Solid State Lasers; 1.6 Structural Properties and Applications of II-VI Semiconductors; 1.7 III-VI Semiconductors1.8 Vapor Phase Techniques1.8.1 Methods of Crystal Growth; 1.8.2 Historical Perspective; 1.8.3 Basic Principles of MOVPE, CBE and ALE; 1.8.3.1 Metalorganic Vapor Phase Epitaxy (MOVPE); 1.8.3.2 Chemical Beam Epitaxy; 1.8.3.3 Photoassisted Processes; 1.8.3.4 Atomic Layer Epitaxy (ALE); 1.9 References; 2 Precursor Chemistry; 2.1 Introduction; 2.2 Group IIIA Metalorganic Precursors; 2.2.1 Aluminum Chemistry; 2.2.2 Gallium; 2.2.3 Indium; 2.2.4 Group III Metal Alkyl Adducts; 2.2.5 Metalorganic Precursor Purity; 2.3 Analysis Techniques; 2.3.1 Determination of Trace Metal Impurities2.3.2 Determination of Organic Impurities2.3.3 Identification of Impurities in the Semiconductor Layer; 2.4 Purification of Group III Trialkyl Compounds; 2.4.1 Classical Purification Techniques; 2.4.2 Adduct Purification Techniques; 2.5 Group II Metalorganic Precursors; 2.5.1 Dialkylzinc Compounds; 2.5.2 Other Group II Metalorganic Precursors; 2.6 Purification of Group II Precursors; 2.6.1 Adduct Purification of Group II Metalorganic Precursors; 2.7 Compounds of Phosphorus, Arsenic and Antimony; 2.7.1 Alkylarsenic Compounds; 2.7.2 Alkyl Phosphorus Hydrides; 2.7.3 Alkylantimony Compounds2.8 Group VI Metalorganic Precursors2.8.1 Compounds of Sulfur, Selenium, and Tellurium; 2.9 Thermal Stability of Metalorganic Precursors; 2.9.1 DSC Data for Group III Metalorganics; 2.9.2 Base-Free Trialkyls, R3M; 2.9.3 Adducts of Group III Trialkyls; 2.9.4 Precursors Containing an Al-Hydride Bond; 2.9.5 DSC Data for Group II Alkyls; 2.9.6 Conclusions; 2.10 References; 3 MOVPE of III-V Compounds; 3.1 Introduction; 3.2 Growth of Gallium Arsenide (GaAs); 3.2.1 Growth Using Conventional Precursors; 3.2.1.1 Me/Ga/AsH3; 3.2.1.2 Et/Ga/AsH3; 3.2.2 Growth of GaAs Using Alternative Ga Precursors3.2.3 Growth of GaAs Using Alternative As Precursors3.2.3.1 Precursor Requirements; 3.2.3.2 Trialkylarsenic Precursors; 3.2.3.3 Alkylarsenic Hydride Precursors; 3.2.3.4 Alternative Arsenic Precursors Containing Other Functional Groups; 3.3 Growth of Aluminum Gallium Arsenide (AlGaAs); 3.3.1 Growth of AlGaAs Using Conventional Precursors; 3.3.1.1 Carbon Incorporation; 3.3.1.2 Oxygen Incorporation; 3.3.2 Growth of AlGaAs Using Alternative A1 Precursors; 3.3.2.1 AlGaAs Growth Using Methyl-Based Alternatives; 3.3.2.2 AlGaAs Growth Using Ethyl-Based Alternatives3.3.2.3 AlGaAs Growth Using Higher Al AlkylsChemical growth methods of electronic materials are the keystone of microelectronic device processing. This book discusses the applications of metalorganic chemistry for the vapor phase deposition of compound semiconductors. Vapor phase methods used for semiconductor deposition and the materials properties that make the organometallic precursors useful in the electronics industry are discussed for a variety of materials.Topics included:* techniques for compound semiconductor growth* metalorganic precursors for III-V MOVPE* metalorganic precursors for II-VI MOVPE* siCompound semiconductorsDesign and constructionChemical vapor depositionCompound semiconductorsDesign and construction.Chemical vapor deposition.621.38152660.2977Jones Anthony C622070O'Brien PaulPh.D.737853MiAaPQMiAaPQMiAaPQBOOK9911019101203321CVD of compound semiconductors1461185UNINA01733nam0 22003371i 450 UON0051971520240122032722.880978-27-283-1573-420231110d2023 |0itac50 bafreIT|||| |||||Moines, saints et héretiques dans l'Éthiopie médiévaleles disciples d'Ēwosṯātēwos et l'invention d'un mouvement monastique hétérodoxe, (14. milieu du 15. siècle)par Olivia Adankpo-Labadie[Roma]École française de Rome2023xix, 488 p.ill.24 cm001UON000386332001 Bibliothèque des Ecoles Françaises d'Athènes et de Rome407AGIOGRAFIA CRISTIANAUONC043112FICONTROVERSIE RELIGIOSEMedioevoEtiopiaUONC102558FIMONACHESIMO ED ORDINI RELIGIOSIEtiopiaStoriaMedioevoUONC102557FIStoria religiosaEtiopiaUONC102559FIRoma (Lesotho)UONL002712270.5Storia della Chiesa. 1200 - 151721Adankpo-LabadieOliviaUONV2942801369942Ecole Francais de RomeUONV061238650ITSOL20250919RICASIBA - SISTEMA BIBLIOTECARIO DI ATENEOUONSIUON00519715SIBA - SISTEMA BIBLIOTECARIO DI ATENEOSI VII E a 028 SI 49063 5 028 SIBA - SISTEMA BIBLIOTECARIO DI ATENEOSI2023868 1J 20231110Bolla n. 585 del 4/12/2023. Moines, saints et héretiques dans l'Éthiopie médiévale3905051UNIOR