01649oam 2200457M 450 991071634910332120200213070610.4(CKB)5470000002520645(OCoLC)1065962401(OCoLC)995470000002520645(EXLCZ)99547000000252064520071213d1926 ua 0engurcn|||||||||txtrdacontentcrdamediacrrdacarrierJohn Clark. March 31, 1926. -- Committed to the Committee of the Whole House and ordered to be printed[Washington, D.C.] :[U.S. Government Printing Office],1926.1 online resource (3 pages)House report / 69th Congress, 1st session. House ;no. 737[United States congressional serial set ] ;[serial no. 8536]Batch processed record: Metadata reviewed, not verified. Some fields updated by batch processes.FDLP item number not assigned.ClaimsDesertion, MilitaryDesertion, NavalUnited StatesHistoryCivil War, 1861-1865Legislative materials.lcgftClaims.Desertion, Military.Desertion, Naval.Wheeler Loren Edgar1862-1932.Republican (IL)1386843WYUWYUOCLCOOCLCQBOOK9910716349103321John Clark. March 31, 1926. -- Committed to the Committee of the Whole House and ordered to be printed3514239UNINA05406nam 2200721Ia 450 991101935800332120200520144314.0978661268721197812826872191282687212978111821168711182116859780470612019047061201097804706102990470610298(CKB)2550000000005901(EBL)477690(OCoLC)609853580(SSID)ssj0000354403(PQKBManifestationID)11245294(PQKBTitleCode)TC0000354403(PQKBWorkID)10313168(PQKB)11270686(MiAaPQ)EBC477690(Perlego)2770605(EXLCZ)99255000000000590120090407d2009 uy 0engur|n|---|||||txtccrLEDs for lighting applications /edited by Patrick MottierLondon ISTE ;Hoboken, NJ Wileyc20091 online resource (298 p.)ISTE ;v.134Description based upon print version of record.9781848211452 1848211457 Includes bibliographical references and index.LEDs for Lighting Applications; Table of Contents; Foreword; Introduction; Chapter 1. Light-Emitting Diodes: Principles and Challenges; 1.1. History of a revolution in the world of the light sources; 1.2. LEDs and lighting; 1.3. Principle of operation, color, efficiency, lifetime and quality of LEDs; 1.3.1. White light production from LEDS: principles and challenges; 1.3.2. Lifetime; 1.3.3. Quality of LEDs; 1.4. Challenges facing LEDs; 1.5. Bibliography; Chapter 2. Substrates for III-Nitride-based Electroluminescent Diodes; 2.1. Introduction2.2. Crystal structure and epitaxial relation with 6H-SiC and Al2O32.3. Defects and constraints due to heteroepitaxy; 2.3.1. Dislocations; 2.3.2. Disorientation of the substrate; 2.3.3. Epitaxial stress; 2.3.4. Thermal stress; 2.4. MOVPE growth of GaN on sapphire; 2.4.1. GaN growth; 2.4.2. Standard 2D epitaxy; 2.4.3. 3D epitaxial growth; 2.4.4. Epitaxial lateral overgrow (ELO 1S); 2.4.5. Anisotropic growth; 2.4.6. Two stage ELO GaN growth (ELO 2S); 2.4.7. GaN growth using pendeo-epitaxy; 2.4.8. Nano epitaxy; 2.5. Bulk nitride substrates2.5.1. HNPS (high nitrogen pressure solution method) for the fabrication of crystalline GaN2.5.2. Ammonothermal synthesis of GaN; 2.5.3. Halide vapor phase epitaxy (HVPE) of GaN; 2.6. Conclusion; 2.7. Bibliography; Chapter 3. III-Nitride High-Brightness Light-Emitting Diodes; 3.1. Introduction; 3.2. p-n junction in GaN; 3.3. Active region: InGaN/GaN quantum well; 3.3.1. Growth and structure; 3.3.2. Optical properties; 3.4. Radiative efficiency; 3.5. Conclusion and prospects; 3.6. Bibliography; Chapter 4. Diode Processing; 4.1. Introduction; 4.2. Orders of magnitude; 4.3. Diode configurations4.3.1. Conventional chip (CC)4.3.2. Flip chip (FC); 4.3.3. Vertical thin film (VTF); 4.3.4. Thin film flip chip (TFFC); 4.4. Light extraction at wafer level; 4.5. Diode processing, etching, contact deposition; 4.5.1. N-type contacts; 4.5.2. P-type contacts; 4.6. Etching; 4.7. Substrate removal; 4.8. Potential evolutions; 4.9. Bibliography; Chapter 5. Packaging; 5.1. Introduction; 5.2. Different packaging processes; 5.2.1. Historical background; 5.2.2. From the wafer to the chip; 5.2.3. Components with connection pins; 5.2.4. SMT leadform components; 5.2.5. SMT "leadless" components5.2.6. Other technologies5.2.7. Conclusion; 5.3. Thermal management; 5.3.1. Motivations; 5.3.2. Heat dissipation modes; 5.3.3. Thermal dissipation in LEDs; 5.3.4. Comparison of different packaging processes; 5.3.5. Conclusion; 5.4. Light extraction in LEDs; 5.4.1. Lateral light extraction in LEDs; 5.4.2. Vertical light extraction through a lens; 5.4.3. Lens/encapsulant materials; 5.4.4. Lenses and encapsulant implementation; 5.5. LED component characteristics; 5.5.1. Thermal and electrical characteristics; 5.5.2. Optical characteristics; 5.5.3. Binning; 5.5.4. Reliability5.6. Conclusion and trendsLight Emitting Diodes (LEDs) are no longer confined to use in commercial signage and have now moved firmly, and with unquestioned advantages, into the field of commercial and domestic lighting. This development was prompted in the late 1980s by the invention of the blue LED, a wavelength that had previously been missing from the available LED spectrum and which opened the way to providing white light. Since that point, LED performance (including energy efficiency) has improved dramatically, and now compares with the performance of fluorescent lights - and there remain further performance improISTELight emitting diodesElectric lightingEquipment and suppliesLight emitting diodes.Electric lightingEquipment and supplies.621.3815/22621.381522Mottier Patrick1837653MiAaPQMiAaPQMiAaPQBOOK9911019358003321LEDs for lighting applications4416422UNINA