01349nam0 22003133i 450 VAN010848020230615022434.675978-81-322-2407-520170317d2015 |0itac50 baengIN|||| |||||Recent Trends in Intelligent and Emerging SystemsKandarpa Kumar Sarma, Manash Pratim Sarma, Mousmita Sarma, EditorsNew DelhiSpringer2015XXIX, 209 p.24 cm001VAN00653772001 Signals and communication technology210 BerlinSpringer2005-INNew DelhiVANL001098SarmaKandarpa KumarVANV083000SarmaManash PratimVANV083762SarmaMousmitaVANV083763Springer <editore>VANV108073650ITSOL20240614RICAhttps://link.springer.com/book/10.1007/978-81-322-2407-5E-book – Accesso al full-text attraverso riconoscimento IP di Ateneo, proxy e/o ShibbolethBIBLIOTECA CENTRO DI SERVIZIO SBAVAN15NVAN0108480BIBLIOTECA CENTRO DI SERVIZIO SBA15CONS SBA EBOOK 773 15EB 773 20170317 Recent Trends in Intelligent and Emerging Systems1412807UNICAMPANIA05589nam 22007454a 450 991101921120332120200520144314.09786610287482978128028748012802874899780470013502047001350897804700129010470012900(CKB)1000000000356161(EBL)242931(OCoLC)77722510(SSID)ssj0000149122(PQKBManifestationID)11150968(PQKBTitleCode)TC0000149122(PQKBWorkID)10237076(PQKB)11628783(MiAaPQ)EBC242931(Perlego)2759135(EXLCZ)99100000000035616120051102d2006 uy 0engur|n|---|||||txtccrESD circuits and devices /Steven H. VoldmanHoboken, NJ John Wiley20061 online resource (422 p.)Description based upon print version of record.9780470847534 0470847530 Includes bibliographical references and index.ESD; Contents; About the Author; Preface; Acknowledgements; 1 Electrostatics and Electrothermal Physics; 1.1 Introduction; 1.2 A Time Constant Approach; 1.2.1 ESD Time Constants; 1.2.2 Time Constant Hierarchy; 1.2.3 Thermal Time Constant; 1.2.4 Thermal Diffusion; 1.2.5 Adiabatic, Thermal Diffusion Time Scale and Steady State; 1.2.6 Electroquasistatics and Magnetoquasistatics; 1.3 Instability; 1.3.1 Electrical Instability; 1.3.2 Electrothermal Instability; 1.3.3 Spatial Instability and Current Constriction; 1.4 Breakdown; 1.4.1 Paschen's Breakdown Theory; 1.4.2 Townsend's Concept1.4.3 Toepler's Law1.5 Avalanche Breakdown; 1.5.1 Breakdown in Air; 1.5.2 Air Breakdown and Peak Currents; 1.5.3 Air Breakdown and Rise Times; 1.5.4 Mesoplasmas and Microplasmas; 1.5.5 Mesoplasma Phenomena; Problems; References; 2 Electrothermal Methods and ESD Models; 2.1 Electrothermal Methods; 2.1.1 Green's Function and Method of Images; 2.1.2 Integral Transforms of the Heat Conduction Equation; 2.1.3 Flux Potential Transfer Relations Matrix Methodology; 2.1.4 Heat Equation with Variable Conductivity; 2.1.5 Duhamel Formulation; 2.2 Electrothermal Models; 2.2.1 Tasca Model2.2.2 Wunsch-Bell Model2.2.3 Smith-Littau Model; 2.2.4 Arkihpov-Astvatsaturyan-Godovosyn-Rudenko Model; 2.2.5 Vlasov-Sinkevitch Model; 2.2.6 Dwyer-Franklin-Campbell Model; 2.2.7 Greve Model; 2.2.8 Negative Differential Resistance Model; 2.2.9 Ash Model; 2.2.10 Statistical Models; Problems; References; 3 Semiconductor Devices and ESD; 3.1 Device Physics; 3.1.1 Nonisothermal Simulation; 3.2 Diodes; 3.2.1 Diode Equation; 3.2.2 Recombination and Generation Mechanisms; 3.3 Bipolar High-current Device Physics; 3.3.1 Bipolar Transistor Equation; 3.3.2 Kirk Effect; 3.3.3 Johnson Limit3.4 Silicon-Controlled Rectifiers3.4.1 Regenerative Feedback; 3.5 Resistors; 3.6 MOSFET High-current Device Physics; 3.6.1 Parasitic Bipolar Transistor Equation; 3.6.2 Avalanche Breakdown and Snapback; 3.6.3 Instability and Current Constriction Model; 3.6.4 Dielectric Breakdown; 3.6.5 Gate Induced Drain Leakage (GIDL); Problems; References; 4 Substrates and ESD; 4.1 Methods of Substrate Analysis; 4.2 Substrate as a Semi-infinite Domain; 4.3 Substrate as a Stratified Medium Using the Transfer Matrix Approach; 4.4 Substrate Transmission Line Model; 4.5 Substrate Lossy Transmission Line Models4.6 Substrate Absorption, Reflection and Transmission4.7 Substrate Electrical and Thermal Discretization; 4.8 Substrate Effects: Electrical Transfer Resistance; 4.9 Substrate Effects: Thermal Transfer Resistance; 4.10 Substrate Thermal Resistance Models; 4.10.1 Variable Cross-section Model; 4.10.2 Variable Elliptical Cross-section Model; 4.10.3 Back-surface Substrate Lumped Analytical Model; 4.11 Heavily Doped Substrates; 4.12 Low-doped Substrates; Problems; References; 5 Wells, Sub-collectors and ESD; 5.1 Diffused Wells; 5.2 Retrograde and Vertically Modulated Wells; 5.2.1 Retrograde Wells5.2.2 Retrograde Well Substrate ModulationThis volume is the first in a series of three books addressing Electrostatic Discharge (ESD) physics, devices, circuits and design across the full range of integrated circuit technologies. ESD Physics and Devices provides a concise treatment of the ESD phenomenon and the physics of devices operating under ESD conditions. Voldman presents an accessible introduction to the field for engineers and researchers requiring a solid grounding in this important area. The book contains advanced CMOS, Silicon On Insulator, Silicon Germanium, and Silicon Germanium Carbon. In addition it also addressCircuits and devicesIntegrated circuitsProtectionElectronic apparatus and appliancesProtectionStatic eliminatorsElectric dischargesElectrostaticsIntegrated circuitsProtection.Electronic apparatus and appliancesProtection.Static eliminators.Electric discharges.Electrostatics.621.381Voldman Steven H872423MiAaPQMiAaPQMiAaPQBOOK9911019211203321ESD1958013UNINA