02520nam 2200625Ia 450 991100737410332120200520144314.01-282-26334-X97866122633471-61583-323-41-84919-068-2(CKB)1000000000704172(EBL)471706(OCoLC)460736339(SSID)ssj0000152690(PQKBManifestationID)12007854(PQKBTitleCode)TC0000152690(PQKBWorkID)10339751(PQKB)11536555(MiAaPQ)EBC471706(EXLCZ)99100000000070417220050203d2005 uy 0engur|n|---|||||txtccrFabrication of GaAs devices /by Albert G. Baca and Carol I.H. AshbyLondon Institution of Electrical Engineersc20051 online resource (370 p.)Processing series ;no. 6Description based upon print version of record.0-86341-353-6 Includes bibliographical references and index.CONTENTS; Acknowledgment; Abbreviations; 1. Introduction to GaAs devices; 2. Semiconductor properties, growth, characterisation and processing techniques; 3. Cleaning and passivation of GaAs and related alloys; 4. Wet etching and photolithography of GaAs and related alloys; 5. Dry etching of GaAs and related alloys; 6. Ohmic contacts; 7. Schottky contacts; 8. Field effect transistors; 9. Heterojunction bipolar transistors; 10. Wet oxidation for optoelectronic and MIS GaAs devices; Glossary; IndexThis book provides fundamental and practical information on all aspects of GaAs processing. The book also gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography, and dry etching.SPE processing series ;no. 6.ElectronicsGallium arsenide semiconductorsElectronics.Gallium arsenide semiconductors.620.1620.1/93620.193621.38152Baca A. G1823069Ashby Carol Iris Hill1953-1823070Institution of Electrical Engineers.MiAaPQMiAaPQMiAaPQBOOK9911007374103321Fabrication of GaAs devices4389481UNINA