03803nam 22005293 450 991100673400332120250604220005.097830364164653036416463(MiAaPQ)EBC31648667(Au-PeEL)EBL31648667(CKB)34825775800041(Exl-AI)31648667(OCoLC)1455117256(EXLCZ)993482577580004120240907d2024 uy 0engurcnu||||||||txtrdacontentcrdamediacrrdacarrierProcessing and Characteristics of Solid-State Structures1st ed.Zurich :Trans Tech Publications, Limited,2024.©2024.1 online resource (143 pages)Solid State Phenomena,1662-9779 ;Volume 3589783036406466 3036406468 Intro -- Processing and Characteristics of Solid-State Structures -- Preface -- Table of Contents -- Investigation of Potential Impact of Nitridation Process on Single Event Gate Rupture Tolerance in SiC MOS Capacitors -- Venus Surface Environmental Chamber Test of SiC JFET-R Multi-Chip Circuit Board -- Coupled Non-Destructive Methods, Kelvin Force Probe Microscopy and µ-Raman to Characterize Doping in 4H-SiC Power Devices -- Concept and Technology for Full Monolithic MOSFET and JBS Vertical Integration in Multi-Terminal 4H-SiC Power Converters -- Comparing 4H-SiC NPN Buffer Layers by Epitaxial Growth and Implantation for Neural Interface Isolation -- Modeling the Charging of Gate Oxide under High Electric Field -- Complementary Two Dimensional Carrier Profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy -- Temperature Dependence of 4H-SiC Gate Oxide Breakdown and C-V Properties from Room Temperature to 500 °C -- Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces -- A Voltage Adjustable Diode Integrated SiC Trench MOSFET with Barrier Control Gate -- Effects of High Gate Voltage Stress on Threshold Voltage Stability in Planar and Trench SiC Power MOSFETs -- Design of Al2O3/LaAlO3/SiO2 Gate Stack on Various Channel Planes for High-Performance 4H-SiC Trench Power MOSFETs -- Channel Density Design Guidelines for the Transient Characteristics of SiC Trench Gate MOSFETs -- Analysis of On-State and Short-Circuit Capability in 3D Trench SiC MOSFET Designs -- Revised Channel Mobility Model for Predictive TCAD Simulations of 4H-SiC MOSFETs -- Improvement of Reflectance Spectroscopy for Oxide Layers on 4H-SiC -- Doping and Temperature Dependence of Carrier Lifetime in 4H SiC Epitaxial Layers.Fail-to-Open Short Circuit Failure Mode of SiC Power MOSFETs: 2-D Thermo-Mechanical Modeling -- Gate Resistance Integration in SiC MOSFETs: Performance Simulations under Different Implementation Methods -- Fast Estimation of the Lateral Fidelity of Ion Implantation in 4H-SiC through Calibration to JFET Transfer Characteristics in TCAD -- Keyword Index -- Author Index.Special topic volume with invited peer-reviewed papers only.Diffusion and defect dataPt. B,Solid state phenomena ;Volume 358Metal oxide semiconductorsGenerated by AISilicon carbideGenerated by AIMetal oxide semiconductorsSilicon carbideRiccio Michele1822804Irace Andrea515880Breglio Giovanni1822805MiAaPQMiAaPQMiAaPQBOOK9911006734003321Processing and Characteristics of Solid-State Structures4389214UNINA