00928nam0-2200337li-450 99000017031020331620180312154744.00017031USA010017031(ALEPH)000017031USA01001703120001109d1975----km-y0itay0103----baengUSQuantum electronicsAmnon Yariv2nd edNew YorkJohn Wileycopyr. 1975elettronica quantistica537.5.Yariv,Amnon2110Sistema bibliotecario di Ateneo dell' Università di SalernoRICA990000170310203316537.5 YAR (A)0019945BKTEC1995090720001110USA01171220020403USA011624PATRY9020040406USA011612Quantum electronics107276UNISA03178nam 22005173 450 991100670890332120250604215736.097830364163113036416315(MiAaPQ)EBC31648671(Au-PeEL)EBL31648671(CKB)34825777100041(Exl-AI)31648671(OCoLC)1455113557(EXLCZ)993482577710004120240907d2024 uy 0engurcnu||||||||txtrdacontentcrdamediacrrdacarrierGrowing and Forming of Semiconductor Layers1st ed.Zurich :Trans Tech Publications, Limited,2024.©2024.1 online resource (107 pages)Solid State Phenomena,1662-9779 ;Volume 3629783036406312 303640631X Intro -- Growing and Forming of Semiconductor Layers -- Preface -- Table of Contents -- Polarity Effect on the Heteroepitaxial Growth of BxC on 4H-SiC by CVD -- Vertical Current Transport in Monolayer MoS2 Heterojunctions with 4H-SiC Fabricated by Sulfurization of Ultra-Thin MoOx Films -- Estimation of Influence on Carbon Vacancy Regarding 4H-SiC Substrate Grown by HTCVD Method -- Resistivity as a Witness of Local Crystal Growth Conditions -- GaN Cap UV Spectroscopy Assessment in AlGaN/GaN HEMT -- SNDM Study of the MOS Interface State Densities on the 3C-SiC / 4H-SiC Stacked Structure -- Development of 200mm SiC Technology - Epitaxial Thickness Uniformity Observation on Different 8 Inch 4H-SiC Substrates -- 4H-SiC Crystal Growth Using Recycled SiC Powder Source -- High-Quality SiC Crystal Growth by Temperature Gradient Control at Initial Growth Stage -- The Role of Air-Pocket in Crucible Structure for High Quality SiC Crystal Growth -- Influence of the Size Distribution of the SiC Powder Source on the Shape of the Crystal Growth Interface during PVT Growth of 4H-SiC Boules -- Confirmation of the Growth Mechanism of the Buffer Layer in Epitaxial Graphene on SiC -- Suppressing the Memory Effect in Al Doped 3C-SiC Grown Using Chlorinated Chemistry -- Investigations into the Impact of Deposition or Growth Techniques on the Field Oxide TID Response for 4H-SiC Space Applications -- Characterization of Growth Sectors in Gallium Nitride Substrate Wafers -- Doping Efficiency and Long-Term Stability of Various SiC Epitaxial Reactors and Process Chemistries -- Keyword Index -- Author Index.Special topic volume with invited peer-reviewed papers only.Diffusion and defect dataPt. B,Solid state phenomena ;Volume 362Silicon carbideGenerated by AIGallium nitrideGenerated by AISilicon carbideGallium nitrideRiccio Michele1822804Irace Andrea515880Breglio Giovanni1822805MiAaPQMiAaPQMiAaPQBOOK9911006708903321Growing and Forming of Semiconductor Layers4389919UNINA