01009cam0 22003011 450 SOBE0008104620241003082940.0978887091842720241003d2023 |||||ita|0103 baitaITStranieri a noi stessiRachel Avivtraduzione di Claudia DurastantiMilanoIperborea2023285 p.20 cm<I >corvi001SOBE000810432001 I *corviStrangers ourselvesSOBA000317674297198Aviv, RachelSOBA000317660701777223Durastanti, ClaudiaSOBA00019635070ITUNISOB20241003RICAUNISOBUNISOB300181654SOBE00081046M 102 Monografia moderna SBNM300005368SI1816542024090545AcquistoV45SpinosaUNISOBUNISOB20241003082902.020241003082940.0SpinosaStrangers ourselves4297198UNISOB01650oam 2200493zu 450 991100481550332120210806235824.01-59124-826-4(CKB)1000000000210809(SSID)ssj0000072808(PQKBManifestationID)11997326(PQKBTitleCode)TC0000072808(PQKBWorkID)10115639(PQKB)10898418(EXLCZ)99100000000021080920160829d1993 uy engtxtccrProperties of lattice-matched and strained indium gallium arsenide[Place of publication not identified]INSPEC Institution of Electrical Engineers1993EMIS datareviews series Properties of lattice-matched and strained indium gallium arsenide Bibliographic Level Mode of Issuance: Monograph0-85296-865-5 Gallium arsenide semiconductorsIndium alloysPhysicsHILCCPhysical Sciences & MathematicsHILCCElectricity & MagnetismHILCCSemiconductorsElectronic propertiesGallium arsenide semiconductors.Indium alloys.PhysicsPhysical Sciences & MathematicsElectricity & Magnetism537.6/223Bhattacharya PallabINSPEC (Information service)PQKBBOOK9911004815503321Properties of lattice-matched and strained indium gallium arsenide4388028UNINA