01570nam0 22003371i 450 UON0030164520231205104007.97739-07-62231-620071008d1997 |0itac50 bagswCH|||| 1||||Philosophie aus der SchweizChristoph Dejung2. AuflZürichPro Helvetia1999145 p.ill.21 cm1 c. geogr.Dono pro Helvetia Fondation suisse pour la cultureIT-UONSI ELV3O.P.H./024Dono Consolato SvizzeroIT-UONSI ELVVII/006001UON003015402001 Opuscoli Pro Helvetia210 ZürichPro Helvetia001UON003029742001 Pro Helvetia. Informazione210 ZurigoPro HelvetiaFILOSOFIASvizzeraUONC067036FICHZürichUONL003145199.494Filosofia occidentale moderna. Svizzera21DEJUNGChristophUONV173388695827Pro HelvetiaUONV272293650ITSOL20240220RICAUON00301645SIBA - SISTEMA BIBLIOTECARIO DI ATENEOSI ELV 3 O.P.H. 024 SI LO 77376 5 024 Dono pro Helvetia Fondation suisse pour la cultureSIBA - SISTEMA BIBLIOTECARIO DI ATENEOSI ELV VII 006 SI DC 454 5 006 Dono Consolato SvizzeroPhilosophie aus der Schweiz54685UNIOR03533nam 2200649Ia 450 991100476460332120200520144314.01-107-20583-20-511-84992-31-282-53604-497866125360450-511-67831-20-511-68154-20-511-67705-70-511-68352-90-511-68477-00-511-67620-40-511-67956-4(CKB)2670000000014114(EBL)501320(OCoLC)609860326(SSID)ssj0000362731(PQKBManifestationID)11304656(PQKBTitleCode)TC0000362731(PQKBWorkID)10381939(PQKB)11468020(UkCbUP)CR9780511676208(MiAaPQ)EBC501320(PPN)261336509(EXLCZ)99267000000001411420091208d2010 uy 0engur|||||||||||txtrdacontentcrdamediacrrdacarrierMagnetic memory fundamentals and technology /Denny D. Tang and Yuan-Jen LeeNew York Cambridge University Press20101 online resource (x, 196 pages) digital, PDF file(s)Title from publisher's bibliographic system (viewed on 05 Oct 2015).0-521-44964-2 Machine generated contents note: 1. Basic magnetostatics; 2. Magnetic films; 3. Properties of patterned ferromagnetic film; 4. Magnetoresistance effects and memory devices; 5. Field-write mode MRAMs; 6. Spin torque transfer MRAM; 7. Applications of MTJ based technology; Appendices: A. Unit conversion table cgs vs. SI; B. Dimensions of magnetism; C. Physical constants; D. Normal (Gaussian) distribution and quantile plot; E. Weibull distribution; F. TDDB reliability test of thin film; G. Binomial distribution and Poisson distribution; H. Defect density; I. Fe, Co, Ni element chemistry parameters; J. Soft error, hard fail and design margin.If you are a semiconductor engineer or a magnetics physicist developing magnetic memory, get the information you need with this, the first book on magnetic memory. From magnetics to the engineering design of memory, this practical book explains key magnetic properties and how they are related to memory performance, characterization methods of magnetic films, and tunneling magnetoresistance effect devices. It also covers memory cell options, array architecture, circuit models, and read-write engineering issues. You'll understand the soft fail nature of magnetic memory, which is very different from that of semiconductor memory, as well as methods to deal with the issue. You'll also get invaluable problem-solving insights from real-world memory case studies. This is an essential book for semiconductor engineers who need to understand magnetics, and for magnetics physicists who work with MRAM. It is also a valuable reference for graduate students working in electronic/magnetic device research.Magnetic memory (Computers)Computer storage devicesMagnetic memory (Computers)Computer storage devices.621.39/73Tang Denny D1689696Lee Yuan-Jen1822368MiAaPQMiAaPQMiAaPQBOOK9911004764603321Magnetic memory4388528UNINA