03001oam 2200745I 450 991097494300332120260415135536.01-315-21830-51-351-83419-31-280-12159-997866135254511-4398-0746-910.1201/b11354 (CKB)2550000000074867(EBL)826926(SSID)ssj0000571062(PQKBManifestationID)11364060(PQKBTitleCode)TC0000571062(PQKBWorkID)10610948(PQKB)11192464(Au-PeEL)EBL826926(CaPaEBR)ebr10517996(CaONFJC)MIL352545(OCoLC)899154965(OCoLC)773316150(CaSebORM)9781439807460(MiAaPQ)EBC826926(OCoLC)811250338(FINmELB)ELB166656(EXLCZ)99255000000007486720180331d2012 uy 0engur|n|---|||||txtccrNonvolatile memory design magnetic, resistive, and phase change /Hai Li, Yiran Chen1st ed.Boca Raton, Fla. :CRC Press,2012.1 online resource (200 p.)Description based upon print version of record.1-138-07663-5 1-4398-0745-0 Includes bibliographical references.1. Introduction to semiconductor memories -- 2. Phase change memory -- 3. Spin-transfer torque RAM -- 4. Resistive random access memory -- 5. Memristors -- 6. The future of nonvolatile memory.The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances,Semiconductor storage devicesMagnetic memory (Computers)Flash memories (Computers)Change of state (Physics)Industrial applicationsSemiconductor storage devices.Magnetic memory (Computers)Flash memories (Computers)Change of state (Physics)Industrial applications.004.568621.39732Li Hai1975-1898321Chen Yiran1976-1898322MiAaPQMiAaPQMiAaPQBOOK9910974943003321Nonvolatile memory design4555266UNINA