01163nam--2200385---450-99000134500020331620050627101841.0000134500USA01000134500(ALEPH)000134500USA0100013450020040114d1968----km-y0itay0103----bagerDE||||||||001yyPerson und subsistenzdie philosophische des Leonties von Byzanz ein beitrag zur spatantiken geistesgeschichteStephan OttoMünchenW. Fink1968209 p.23 cm.20012001001-------2001Leazio di BisanzioFilosofia180OTTO,Stephan181734ITsalbcISBD990001345000203316II.1.A. 519(IV C 2235)84433 L.M.IV CII.1.A. 519a(IV C 2235 bis)86606 L.M.IV CBKUMASIAV31020040114USA011326PATRY9020040406USA011735COPAT39020050627USA011018Person und subsistenz927247UNISA03688nam 2200709Ia 450 991096566220332120251116173946.097866111212429781281121240128112124X97898127068509812706852(CKB)1000000000334173(EBL)312269(OCoLC)476099323(SSID)ssj0000948680(PQKBManifestationID)11484554(PQKBTitleCode)TC0000948680(PQKBWorkID)10951193(PQKB)11348985(MiAaPQ)EBC312269(WSP)00006311(Au-PeEL)EBL312269(CaPaEBR)ebr10188789(CaONFJC)MIL112124(Perlego)848411(EXLCZ)99100000000033417320060911d2007 uy 0engur|n|---|||||txtccrSiC materials and devices /edited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein1st ed.New Jersey ;London World Scientific20071 online resource (143 p.)Selected topics in electronics and systems ;43SiC materials and devices ;2Description based upon print version of record.9789812703835 9812703837 Includes bibliographical references.Preface; CONTENTS; Growth of Sic Substrates A. Powell, J. Jenny, S. Muller, H. Mcd. Hobgood, V. Tsvetkov, R. Lenoard and C. Carter, Jr.; 1. Introduction; 2. Sic Bulk Growth; 3. Crystal Orientation; 4. Crystal Diameter Enlargement; 5. Substrate Defects; 6. Doping in SIC; 7. Sic Substrates for Microwave Devices; 8. Wafering and Polish; 9. Substrate Cost; 10. Conclusions; Acknowledgments; References; Deep Level Defects in Silicon Carbide A. A. Lebedev; 1. Introduction; 2. Parameters of Deep Centers in Sic; 3. Influence of Impurities on the Growth of Epitaxial Sic Layers4. Deep Centers and Recombination Processes in Sic5. Conclusion; Acknowledgements; References; Silicon Carbide Junction Field Effect Transistors D. Stephani and P. Friedrichs; 1. Introduction; 2. Lateral SiC-JFETs; 3. The Vertical JFET (VJFET); References; Sic BJTs T. P. Chow and A. K. Agarwal; 1. Introduction; 2, Figures of Merit; 3. Power Bipolar Transistors; 4. Commercialization Challenges; ReferencesSilicon carbide is known to have been investigated since 1907 when Captain H J Round demonstrated yellow and blue emission by applying bias between a metal needle and an SiC crystal. The potential of using SiC in semiconductor electronics was already recognized half a century ago. Despite its well-known properties, it has taken a few decades to overcome the exceptional technological difficulties of getting silicon carbide material to reach device quality and travel the road from basic research to commercialization. This second of two volumes reviews four important additional areas: the growthSelected topics in electronics and systems ;v. 40.Silicon carbideElectric propertiesSemiconductorsSilicon carbideElectric properties.Semiconductors.621.38152Shur Michael770441Rumyantsev Sergey1788672Levinshteĭn M. E(Mikhail Efimovich)1890474MiAaPQMiAaPQMiAaPQBOOK9910965662203321SiC materials and devices4534408UNINA