01226oam 2200301z- 450 991014350140332120080308085434.0(CKB)1000000000210954(EXLCZ)99100000000021095420210330c1998uuuu -u- -engApproximation algorithms for combinatorial optimization international workshop, APPROX '98, Aalborg, Denmark, July 18-19, 1998 : proceedings /Klaus Jansen, José Rolim (eds.)Springer Berlin / Heidelberg3-540-64736-8 INTERNATIONAL WORKSHOP APPROX'98, AALBORG, DENMARK, JULY 18-19, 1998, PROCEEDINGSComputer algorithmsCongressesApproximation theoryData processingCongressesCombinatorial optimizationData processingCongressesComputer algorithmsApproximation theoryData processingCongresses.Combinatorial optimizationData processingCongresses.005.1Rolim José D. P867300Jansen Klaus867301BOOK9910143501403321Approximation algorithms for combinatorial optimization2860512UNINA03483nam 2200637 a 450 991095808730332120251116203616.097898127745219812774521(CKB)1000000000410906(DLC)2006283987(StDuBDS)AH24684526(SSID)ssj0000245990(PQKBManifestationID)11238393(PQKBTitleCode)TC0000245990(PQKBWorkID)10180638(PQKB)11208010(MiAaPQ)EBC1681716(WSP)00005986(Au-PeEL)EBL1681716(CaPaEBR)ebr10201386(CaONFJC)MIL530328(OCoLC)879074363(Perlego)847341(BIP)15210499(BIP)13341426(EXLCZ)99100000000041090620061005d2005 uy 0engurcn|||||||||txtccrSilicon carbide power devices /B. Jayant Baliga1st ed.New Jersey World Scientificc20051 online resource (xxi, 503 p. )ill. (some col.)Bibliographic Level Mode of Issuance: Monograph9789812566058 9812566058 Includes bibliographical references and index.ch. 1. Introduction -- ch. 2. Material properties and technology -- ch. 3. Breakdown voltage -- ch. 4. PiN rectifiers -- ch. 5. Schottky rectifiers -- ch. 6. Shielded Schottky rectifiers -- ch. 7. Metal-semiconductor field effect transistors -- ch. 8. The Baliga-pair configuration -- ch. 9. Planar power MOSFETs -- ch. 10. Shielded planar MOSFETs -- ch. 11. Trench-gate power MOSFETs -- ch. 12. Shielded trench-gate power MOSFETs -- ch. 13. Charge coupled structures -- ch. 14. Integral diodes -- ch. 15. Lateral high voltage FETs -- ch. 16. Synopsis.Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices. Sample Chapter(s). Chapter 1: Introduction (72 KB). Contents: Material Properties and Technology; Breakdown Voltage; PiN Rectifiers; Schottky Rectifiers; Shielded Schottky Rectifiers; Metal-Semiconductor Field Effect Transistors; The Baliga-Pair Configuration; Planar Power MOSFETs; Shielded Planar MOSFETs; Trench-Gate Power MOSFETs; Shielded Trendch-Gate MOSFETs; Charge Coupled Structures; Integral Diodes; Lateral High Voltage FETs; Synopsis. Readership: For practising engineers working on power devices, and as a supplementary textbook for a graduate level course on power devices.Silicon carbideElectric propertiesSemiconductorsSilicon carbideElectric properties.Semiconductors.621.3815/2Baliga B. Jayant1948-7722MiAaPQMiAaPQMiAaPQBOOK9910958087303321Silicon carbide power devices4478945UNINA