03044nam 2200649Ia 450 991087705760332120200520144314.01-282-33149-397866123314970-470-45526-80-470-45525-X10.1002/9780470455265(CKB)1000000000807695(EBL)739045(SSID)ssj0000342280(PQKBManifestationID)11259726(PQKBTitleCode)TC0000342280(PQKBWorkID)10285505(PQKB)11296433(MiAaPQ)EBC739045(CaBNVSL)mat05361029(IDAMS)0b00006481178849(IEEE)5361029(OCoLC)463436649(PPN)257509054(EXLCZ)99100000000080769520090429d2009 uy 0engur|n|---|||||txtccrReliability wearout mechanisms in advanced CMOS technologies /Alvin W. Strong ... [et al.]Hoboken, N.J. Wileyc20091 online resource (642 p.)IEEE Press series on microelectronic systemsDescription based upon print version of record.0-471-73172-2 Includes bibliographical references and index.Introduction / Alvin W. Strong -- Dielectric characterization and reliability methodology / Ernest Y. Wu, Rolf-Peter Vollertsen, and Jordi Suñé -- Dielectric breakdown of gate oxides: physics and experiments / Ernest Y. Wu, Rolf-Peter Vollertsen, and Jordi Suñé -- Negative bias temperature instabilities in pMOSFET devices / Giuseppe LaRosa -- Hot carriers / Stewart E. Rauch, III -- Stress-induced voiding / Timothy D. Sullivan -- Electromigration / Timothy D. Sullivan.A comprehensive treatment of all aspects of CMOS reliability wearout mechanisms This book covers everything students and professionals need to know about CMOS reliability wearout mechanisms, from basic concepts to the tools necessary to conduct reliability tests and analyze the results. It is the first book of its kind to bring together the pertinent physics, equations, and procedures for CMOS technology reliability in one place. Divided into six relatively independent topics, the book covers: Introduction to Reliability Gate Dielectric Reliability Negative Bias IEEE Press series on microelectronic systems.Metal oxide semiconductors, ComplementaryReliabilityMicroelectronicsMetal oxide semiconductors, ComplementaryReliability.Microelectronics.621.39732ELT 358fstubZN 4960rvkStrong Alvin Wayne1946-845570MiAaPQMiAaPQMiAaPQBOOK9910877057603321Reliability wearout mechanisms in advanced CMOS technologies1887744UNINA