05459nam 2200685Ia 450 991087688720332120200520144314.01-282-16520-897866121652070-470-61139-10-470-39400-5(CKB)2550000000005904(EBL)477693(OCoLC)520990451(SSID)ssj0000337085(PQKBManifestationID)11248728(PQKBTitleCode)TC0000337085(PQKBWorkID)10289494(PQKB)11545005(MiAaPQ)EBC477693(EXLCZ)99255000000000590420080226d2008 uy 0engur|n|---|||||txtccrElectron transport in nanostructures and mesoscopic devices /Thierry OuisseLondon ISTE ;Hoboken, NJ Wiley20081 online resource (399 p.)ISTE ;v.52Description based upon print version of record.1-84821-050-7 Includes bibliographical references and index.Electron Transport in Nanostructures and Mesoscopic Devices; Table of Contents; Chapter 1. Introduction; 1.1. Introduction and preliminary warning; 1.2. Bibliography; Chapter 2. Some Useful Concepts and Reminders; 2.1. Quantum mechanics and the Schrödinger equation; 2.1.1. A more than brief introduction; 2.1.2. The postulates of quantum mechanics; 2.1.3. Essential properties of observables; 2.1.4. Momentum operator; 2.1.5. Stationary states; 2.1.6. Probability current; 2.1.7. Electrons in vacuum and group velocity; 2.2. Energy band structure in a periodic lattice2.3. Semi-classical approximation2.4. Electrons and holes; 2.5. Semiconductor heterostructure; 2.6. Quantum well; 2.6.1. 1D case; 2.6.2. Coupled quantum wells; 2.6.3. Quantum-confined Stark effect; 2.7. Tight-binding approximation; 2.8. Effective mass approximation; 2.8.1. Wannier functions; 2.8.2. Effective mass Schrödinger equation; 2.9. How good is the effective mass approximation in a confined structure?; 2.10. Density of states; 2.10.1. 3D case; 2.10.2. 2D case; 2.10.3. 1D case; 2.10.4. Summary; 2.11. Fermi-Dirac statistics; 2.12. Examples of 2D systems2.13. Characteristic lengths and mesoscopic nature of electron transport2.14. Mobility: Drude model; 2.15. Conduction in degenerate materials; 2.16. Einstein relationship; 2.17. Low magnetic field transport; 2.18. High magnetic field transport; 2.18.1. Introduction; 2.18.2. Some reminders about the particle Hamiltonian in the presence of an electromagnetic field; 2.18.3. Action of a magnetic field (classical); 2.18.4. High magnetic field transport; 2.19. Exercises; 2.19.1. Exercise; 2.19.2. Exercise; 2.19.3. Exercise; 2.19.4. Exercise; 2.20. BibliographyChapter 3. Ballistic Transport and Transmission Conductance3.1. Conductance of a ballistic conductor; 3.2. Connection between 2D and 1D systems; 3.3. A classical analogy; 3.4. Transmission conductance: Landauer's formula; 3.5. What if the device length really does go down to zero?; 3.6. A smart experiment which shows you everything; 3.7. Relationship between the Landauer formula and Ohm's law; 3.8. Dissipation with a scatterer; 3.9. Voltage probe measurements; 3.10. Comment about the assumption that T is constant; 3.11. Generalization of Landauer's formula: Büttiker's formula3.11.1. Büttiker's formula3.11.2. Three-terminal device; 3.11.3. Four-terminal device; 3.12. Non-zero temperature; 3.12.1. Large applied bias μ1-μ2>>0; 3.12.2. Incoherent states; 3.12.3. Coherent states; 3.12.4. Physical parameters included in the transmission probability; 3.12.5. Linear response (μ1-μ2<kBT or T(E)=Cst); 3.13. The integer quantum Hall effect; 3.13.1. The experiment; 3.13.2. The explanation; 3.14. Exercises; 3.14.1. Exercise; 3.14.2. Exercise; 3.14.3. Exercise; 3.14.4. Exercise; 3.14.5. Exercise; 3.15. Bibliography; Chapter 4. S-matrix Formalism4.1. Scattering matrix or S-matrixThis book introduces researchers and students to the physical principles which govern the operation of solid-state devices whose overall length is smaller than the electron mean free path. In quantum systems such as these, electron wave behavior prevails, and transport properties must be assessed by calculating transmission amplitudes rather than microscopic conductivity. Emphasis is placed on detailing the physical laws that apply under these circumstances, and on giving a clear account of the most important phenomena. The coverage is comprehensive, with mathematics and theoretical material sISTEElectron transportNanostructured materialsElectric propertiesNanostructuresElectric propertiesMesoscopic phenomena (Physics)Electron transport.Nanostructured materialsElectric properties.NanostructuresElectric properties.Mesoscopic phenomena (Physics)530.4/1VE 9850rvkOuisse Thierry1757294MiAaPQMiAaPQMiAaPQBOOK9910876887203321Electron transport in nanostructures and mesoscopic devices4195108UNINA