02241oam 2200445zu 450 991087289940332120241212214904.010.1109/HTEMDS.1998(CKB)111026746721706(SSID)ssj0000395119(PQKBManifestationID)12104822(PQKBTitleCode)TC0000395119(PQKBWorkID)10453247(PQKB)11147728(NjHacI)99111026746721706(EXLCZ)9911102674672170620160829d1998 uy engur|||||||||||txtccr1998 Conference on High-Temperature Electronic Materials, Devices and Sensors Proceedings[Place of publication not identified]IEEE19981 online resource (500 pages)Bibliographic Level Mode of Issuance: Monograph9780780344372 0780344375 This paper presents the high temperature behaviour of RF LDMOSFETs used in wireless applications. Self heating is an important issue in RF power transistors. Self heating could cause thermal runaway in the device if the package has not been optimally designed to dissipate the heat generated in the device. Temperature rise due to self heating is of greater concern in SOI devices because of the presence of the buried oxide layer which has lesser thermal conductivity than bulk Si. In this work, 2D finite element electrothermal simulators were used to investigate the extent of self heating. Thermal models were solved in the MIXEDMODE circuit/device simulator with the package parasitics included, to study the temperature rise in the device due to self heating.DetectorsCongressesElectronic apparatus and appliancesThermal propertiesCongressesDetectorsElectronic apparatus and appliancesThermal properties681.2Institute of Electrical and Electronics Engineers, Inc. StaffPQKBPROCEEDING99108728994033211998 Conference on High-Temperature Electronic Materials, Devices and Sensors Proceedings2509152UNINA