02709oam 22007212a 450 991083087410332120230828220822.01-280-56099-197866105609983-527-60281-X(CKB)1000000000019126(MH)002725318-X(SSID)ssj0000306013(PQKBManifestationID)11228736(PQKBTitleCode)TC0000306013(PQKBWorkID)10298580(PQKB)10243671(MiAaPQ)EBC4956450(Au-PeEL)EBL4956450(CaONFJC)MIL56099(OCoLC)824553956(EXLCZ)99100000000001912619920214d1992 uy 0engurcnu||||||||txtccrPhysical properties of III-V semiconductor compounds InP, InAs, GaAs, GaP, InGaAs, and InGaAsP /Sadao Adachi[electronic resource]New York Wileyc19921 online resource (xviii, 318 p. )ill. ;"A Wiley-Interscience publication."0-471-57329-9 Includes bibliographical references and indexes.This study explores the key properties of III-V compounds and presents the various material parameters and constants of these semiconductors for a number of research applications. The experimental and theoretical data has been summarized in tabular, graphical and functional formats.Gallium arsenide semiconductorsIndium alloysIndium phosphideGallium arsenide semiconductorsIndium alloysIndium phosphideElectricity & MagnetismHILCCPhysicsHILCCPhysical Sciences & MathematicsHILCCGallium arsenide semiconductors.Indium alloys.Indium phosphide.Gallium arsenide semiconductorsIndium alloysIndium phosphideElectricity & MagnetismPhysicsPhysical Sciences & Mathematics537.6/226Adachi Sadao1950-1611959DLCDLCDLCBOOK9910830874103321Physical properties of III-V semiconductor compounds4063844UNINAThis Record contains information from the Harvard Library Bibliographic Dataset, which is provided by the Harvard Library under its Bibliographic Dataset Use Terms and includes data made available by, among others the Library of Congress