05342nam 2200649Ia 450 991083009550332120200820215741.01-282-27952-197866122795223-527-62841-X3-527-62842-8(CKB)1000000000789703(EBL)482191(OCoLC)741449488(SSID)ssj0000391846(PQKBManifestationID)11278211(PQKBTitleCode)TC0000391846(PQKBWorkID)10346979(PQKB)11556949(MiAaPQ)EBC482191(PPN)146317157(EXLCZ)99100000000078970320071029g20082009 uy 0engur|n|---|||||txtccrHandbook of nitride semiconductors and devicesVol. 2Electronic and optical processes in nitrides[electronic resource] /Hadis Morkoc ʹWeinheim Wiley-VCH ;[Chichester John Wiley, distributor]c2008-c20091 online resource (885 p.)Handbook of Nitride Semiconductors and Devices (VCH)Description based upon print version of record.3-527-40838-X Includes bibliographical references and index.Handbook of Nitride Semiconductors and Devices; Contents; Preface; Color Tables; 1 Metal Contacts to GaN and Processing; Introduction; 1.1 A Primer for Semiconductor-Metal Contacts; 1.2 Current Flow in Metal-Semiconductor Junctions; 1.2.1 The Regime Dominated by Thermionic Emission; 1.2.2 Thermionic Field Emission Regime; 1.2.3 Direct Tunneling Regime; 1.2.4 Leakage Current; 1.3 GaN Schottky Barriers for High-Voltage Rectifiers; 1.4 Ohmic Contact Resistance; 1.4.1 Specific Contact Resistivity; 1.4.2 Semiconductor Resistance; 1.5 Determination of the Contact Resistivity1.6 Ohmic Contacts to GaN1.6.1 Nonalloyed Ohmic Contacts; 1.6.2 Alloyed Ohmic Contacts on n-Type GaN; 1.6.3 Contacts to p-Type GaN and Transparent Conducting Oxides; 1.6.4 Effect of Surface Treatment on Ohmic Contacts; 1.6.5 Case of a Forward-Biased p-n Junction in Conjunction with Nonohmic Contacts to p-GaN; 1.7 Structural Analysis of Ohmic Contacts on GaN; 1.8 Etching Techniques for III Nitrides; 1.8.1 Dry (Plasma) Etching; 1.8.1.1 Electron Cyclotron Resonance Etching; 1.8.1.2 Ion Milling; 1.8.1.3 Reactive Ion Etching; 1.8.1.4 Inductively Coupled Plasma Etching1.8.1.5 Selective Etching of GaN/AlGaN1.8.1.6 Dry Etching of p-GaN; 1.8.1.7 Dry Etching on Ga- and N-Face of Freestanding GaN Substrate; 1.8.1.8 Magnetron Reactive Ion Etching; 1.8.1.9 Chemically Assisted Ion Beam Etching (CAIBE); 1.8.1.10 RF Plasma Etching of GaN; 1.8.2 Laser Ablation Etching of GaN; 1.8.3 Wet Etching; 1.8.4 Photochemical Etching; 1.9 Implant Isolation; 1.10 Process Damage; References; 2 Determination of Impurity and Carrier Concentrations; Introduction; 2.1 Impurity Binding Energy; 2.2 Conductivity Type: Hot Probe and Hall Measurements; 2.2.1 Measurement of Mobility2.3 Semiconductor Statistics, Density of States, and Carrier Concentration2.3.1 Degeneracy Factor; 2.3.2 Charge Balance Equation and Carrier Concentration; 2.3.2.1 n-Type Semiconductor; 2.3.2.2 p-Type Semiconductor; 2.3.2.3 Multiple Occupancy of the Valence Bands; 2.4 Capacitance-Voltage Measurements; Appendix 2.A. Fermi Integral; Appendix 2.B. Density of States in 3D, 2D, and 1D Systems; 2.B.1. Three-Dimensional Structure; 2.B.2. Two-Dimensional Structure; 2.B.3. One-Dimensional Structure; References; 3 Carrier Transport; 3.1 Prelude; 3.2 Carrier Scattering3.2.1 Boltzmann Transport Equation3.2.2 Impurity Scattering; 3.2.2.1 Ionized Impurity Scattering; 3.2.2.2 Neutral Impurity Scattering; 3.2.3 Acoustic Phonon Scattering; 3.2.3.1 Deformation Potential Scattering; 3.2.3.2 Piezoelectric Scattering; 3.2.4 Optical Phonon Scattering; 3.2.4.1 Nonpolar Optical Phonon Scattering; 3.2.4.2 Polar Optical Phonon Scattering; 3.2.5 Short-Range Potential-Induced Scattering; 3.2.5.1 Alloy Potential-Induced Scattering; 3.2.5.2 Potential Barrier Scattering; 3.2.5.3 Potential Well Scattering; 3.2.5.4 Space Charge Scattering; 3.2.5.5 Dipole Scattering3.2.6 Carrier-Carrier ScatteringThe three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 2 addresses the electrical and optical properties of nitride materials. It includes semiconductor metal contacts, impurity and carrier concentrations, and carrier transport in semiconductors.Handbook of Nitride Semiconductors and Devices (VCH)SemiconductorsMaterialsNitridesSemiconductorsMaterials.Nitrides.621.38152Morkoc ʹ Hadis920442Morkoc ʹ Hadis920442MiAaPQMiAaPQMiAaPQBOOK9910830095503321Handbook of nitride semiconductors and devices3916341UNINA