02590nam 2200625 450 991082998380332120240219135646.01-280-54207-197866105420790-471-66099-X0-471-72291-X10.1002/047172291X(CKB)111087027115184(EBL)469566(SSID)ssj0000180160(PQKBManifestationID)11183130(PQKBTitleCode)TC0000180160(PQKBWorkID)10149175(PQKB)10937861(MiAaPQ)EBC469566(CaBNVSL)mat05237311(IDAMS)0b00006481095595(IEEE)5237311(OCoLC)85820265(PPN)272624586(EXLCZ)9911108702711518420151221d2005 uy engur|n|---|||||txtccrInsulated gate bipolar transistor (IGBT) theory and design /Vinod Kumar KhannaPiscataway, New Jersey :IEEE Press,c2003.[Piscataqay, New Jersey] :IEEE Xplore,[2005]1 online resource (648 p.)Description based upon print version of record.0-471-23845-7 Includes bibliographical references and index.Preface. -- Power Device Evolution and the Advert of IGBT. -- IGBT Fundamentals and Status Review. -- MOS Components of IGBT. -- Bipolar Components of IGBT. -- Physics and Modeling of IGBT. -- Latch-Up of Parasitic Thyristor in IGBT. -- Design Considerations of IGBT Unit Cell. -- IGBT Process Design and Fabrication Technology. -- Power IGBT Modules. -- Novel IGBT Design Concepts, Structural Innovations, and Emerging Technologies. -- IGBT Circuit Applications. -- Index. A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT. . All-in-one resource. Explains the fundamentals of MOS and bipolar physics.. Covers IGBT operation, device and process design, power modules, and new IGBT structures.IGBTInsulated gate bipolar transistorsElectrical and Electronics Engineering.Insulated gate bipolar transistors.621.3815621.3815282Khanna Vinod Kumar1952-845911CaBNVSLCaBNVSLCaBNVSLBOOK9910829983803321Insulated gate bipolar transistor (IGBT)1888786UNINA