02407nam 22006011 450 991082796470332120240405122511.03-03813-148-2(CKB)3710000000025521(EBL)1869136(SSID)ssj0001127796(PQKBManifestationID)11634362(PQKBTitleCode)TC0001127796(PQKBWorkID)11152749(PQKB)10457050(MiAaPQ)EBC1869136(Au-PeEL)EBL1869136(CaPaEBR)ebr10777855(OCoLC)860712680(EXLCZ)99371000000002552120070910d2007 uy 0engur|n|---|||||txtccrHgCDTe system reference guide /D. J. Fisher, editor1st ed.Stafa-Zuerich, Switzerland :TTP, Trans Tech Publications,[2007]©20071 online resource (201 p.)Defects and diffusion forum,1012-0386 ;v. 267Description based upon print version of record.3-908451-44-2 Includes bibliographical references and indexes.HgCdTe System - Reference Guide; Table of Contents; AbstractsThis system, consisting of compositions lying between the end-members, CdTe and HgTe, constitutes perhaps the third most important semiconductor after Si and GaAs. Its importance stems from the ability to tailor the band-gap precisely between that (1.5eV) of the semiconductor, CdTe, and the zero value of the semi-metal, HgTe; giving, in particular, one of the most versatile infra-red detectors known. The intermediate compositions also benefit from the usual mechanisms which improve the mechanical properties of alloys. As an aid to those working on this system, this volume summarizes known diffDiffusion and defect data.Pt. A,Defect and diffusion forum ;v. 267.Physical metallurgyDiffusionSolidsDefectsPhysical metallurgy.Diffusion.SolidsDefects.669.95Fisher D. J727312MiAaPQMiAaPQMiAaPQBOOK9910827964703321HgCDTe system4038112UNINA