02183nam 2200433 450 991082589700332120230629215305.03-7369-6451-X(CKB)4100000011971356(MiAaPQ)EBC6653662(Au-PeEL)EBL6653662(OCoLC)1259323924(EXLCZ)99410000001197135620220320d2021 uy 0engurcnu||||||||txtrdacontentcrdamediacrrdacarrierAlN base layers for UV LEDs /Sebastian Walde1st ed.Göttingen :Cuvillier Verlag,[2021]©20211 online resource (157 pages)Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik ;v.663-7369-7451-5 Intro -- Introduction and Motivation -- CHAPTER 1 Experimental methods -- 1.1 Heteroepitaxial growth of AlN on sapphire -- 1.2 AlN templates as UV LED base layers -- 1.3 State of research -- CHAPTER 2 Experimental methods -- 2.1 Sample fabrication -- 2.2 Characterisation methods -- 2.3 Method for light extraction simulations -- CHAPTER 3 High temperature annealing of MOVPE grown AlN -- 3.1 Annealing of 350 nm thick AlN -- 3.2 Annealing of layer thickness series -- 3.3 Variation of the annealing parameters -- CHAPTER 4 Nanopatterned sapphire substrates -- 4.1 Light extraction simulations of nanopatternedinterface -- 4.2 Growth on sapphire nanopillars -- 4.3 Growth on sapphire nanoholes -- CHAPTER 5 UVC LED performance on the developed AlN templates -- Conclusion -- APPENDIX A.Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut für HöchstfrequenztechnikLED lightingLED lighting.621.32Walde Sebastian1721146MiAaPQMiAaPQMiAaPQBOOK9910825897003321AlN base layers for UV LEDs4120402UNINA